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Synthesis of atomically thin GaSe wrinkles for strain sensors

Frontiers of Physics volume 11, Article number: 116802 (2016) Cite this article

Abstract

A wrinkle-based thin-film device can be used to develop optoelectronic devices, photovoltaics, and strain sensors. Here, we propose a stable and ultrasensitive strain sensor based on two-dimensional (2D) semiconducting gallium selenide (GaSe) for the first time. The response of the electrical resistance to strain was demonstrated to be very sensitive for the GaSe-based strain sensor, and it reached a gauge factor of–4.3, which is better than that of graphene-based strain sensors. The results show us that strain engineering on a nanoscale can be used not only in strain sensors but also for a wide range of applications, such as flexible field-effect transistors, stretchable electrodes, and flexible solar cells.

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Authors and Affiliations

  1. The MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300457, China

    Cong Wang, Xin-Zheng Zhang & Qian Liu

  2. National Center for Nanoscience and Technology, No. 11 Beiyitiao, Zhongguancun, Beijing, 100190, China

    Cong Wang, Hao-Ran Zhang, Le-Na Du, Lei Wang, Feng-You Yang & Qian Liu

  3. School of Materials Science and Engineering, Beihang University, Beijing, 100191, PR China

    Sheng-Xue Yang

Authors
  1. Cong Wang
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  2. Sheng-Xue Yang
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  3. Hao-Ran Zhang
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  4. Le-Na Du
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  5. Lei Wang
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  7. Xin-Zheng Zhang
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Correspondence to Xin-Zheng Zhang or Qian Liu.

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Cite this article

Wang, C., Yang, SX., Zhang, HR. et al. Synthesis of atomically thin GaSe wrinkles for strain sensors. Front. Phys. 11, 116802 (2016). https://doi.org/10.1007/s11467-015-0522-9

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  • DOI: https://doi.org/10.1007/s11467-015-0522-9

Keywords

  • GaSe wrinkles
  • strain sensor