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Strong localization across the metal-insulator transition at the Ag/Si(111)-(√3 × √3)R30° interface

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Abstract

We present the temperature dependent electrical transport measurements of Ag/Si(111)-(√3 × √3)R30° by the in situ micro-four-point probe method integrated with scanning tunneling microscopy. The surface structure characterizations show hexagonal patterns at room temperature, which supports the inequivalent triangle (IET) model. A metal-insulator transition occurs at ∼115 K.The lowtemperature transportmeasurements clearly reveal the strong localization characteristics of the insulating phase.

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Correspondence to Jian-Dong Guo.

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Tang, YY., Guo, JD. Strong localization across the metal-insulator transition at the Ag/Si(111)-(√3 × √3)R30° interface. Front. Phys. 8, 44–49 (2013). https://doi.org/10.1007/s11467-013-0290-3

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