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Characteristics and developments of quantum-dot infrared photodetectors

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Abstract

Quantum dots infrared photodetectors (QDIPs) theoretically have several advantages compared with quantum wells infrared photodetectors (QWIPs). In this paper, we discuss the theoretical advantages of QDIPs including the normal incidence response, lower dark current, higher responsivity and detectivity, etc. Recent device fabrication and experiment results in this field are also presented. Based on the analysis of existing problems, some approaches that would improve the capability of the device are pointed out.

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Authors and Affiliations

  1. Quantum Materials and Devices Lab, Department of Physics, Nankai University, Tianjin, 300457, China

    Zhang Guan-jie, Shu Yong-chun, Yao Jiang-hong, Shu Qiang, Deng Hao-liang, Jia Guo-zhi & Wang Zhan-guo

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  1. Zhang Guan-jie
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  2. Shu Yong-chun
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  3. Yao Jiang-hong
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  4. Shu Qiang
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  5. Deng Hao-liang
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  6. Jia Guo-zhi
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  7. Wang Zhan-guo
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Corresponding author

Correspondence to Zhang Guan-jie.

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Zhang, Gj., Shu, Yc., Yao, Jh. et al. Characteristics and developments of quantum-dot infrared photodetectors. Front. Phys. China 1, 334–338 (2006). https://doi.org/10.1007/s11467-006-0030-z

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  • DOI: https://doi.org/10.1007/s11467-006-0030-z

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