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Dependence of error sensitivity of frequency on bias voltage in force-balanced micro accelerometer

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Abstract

To predict more precisely the frequency of force-balanced micro accelerometer with different bias voltages, the effects of bias voltages on error sensitivity of frequency is studied. The resonance frequency of accelerometer under closed loop control is derived according to its operation principle, and its error sensitivity is derived and analyzed under over etching structure according to the characteristics of Deep Reaction Ion Etching (DRIE). Based on the theoretical results, micro accelerometer is fabricated and tested to study the influences of AC bias voltage and DC bias voltage on sensitivity, respectively. Experimental results indicate that the relative errors between test data and theory data are less than 7%, and the fluctuating value of error sensitivity under the range of voltage adjustment is less than 0.01 μm−1. It is concluded that the error sensitivity with designed parameters of structure, circuit and process error can be used to predict the frequency of accelerometer with no need to consider the influence of bias voltage.

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Correspondence to Wu Zhou.

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Chen, L., Zhou, W. Dependence of error sensitivity of frequency on bias voltage in force-balanced micro accelerometer. Front. Mech. Eng. 8, 146–149 (2013). https://doi.org/10.1007/s11465-013-0260-z

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  • DOI: https://doi.org/10.1007/s11465-013-0260-z

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