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The design and fabrication on gate type resonant tunneling transistor

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Frontiers of Electrical and Electronic Engineering in China

Abstract

In light of fabricating resonant tunneling diode (RTD), in this paper a GaAs-based resonant tunneling transistor with gate structure (GRTT) has been designed and fabricated successfully. A systematic depiction centers on the designs of material structure, device structure, photolithography mask, fabrication of device and the measurement and analysis of parameters. The fabricated GRTT has a maximum PVCR of 46 and a maximum transconductance of 8 mS. The work lays the foundation for further improvement on the performance and parameters of RTT.

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Author information

Authors and Affiliations

  1. School of Electronic Information Engineering, Tianjin University, Tianjin, 300072, China

    Weilian Guo, Huilai Liang, Ruiliang Song, Shilin Zhang, Luhong Mao, Liuchang Hu, Jianheng Li & Haitao Qi

  2. 13th Institute of CETC, Shijiazhuang, 050051, China

    Weilian Guo, Zhen Feng, Guoping Tian, Yuehui Shang, Yongqiang Liu, Yali Li, Mingwen Yuan & Xiaobai Li

Authors
  1. Weilian Guo
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  2. Huilai Liang
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  3. Ruiliang Song
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  4. Shilin Zhang
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  5. Luhong Mao
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  6. Liuchang Hu
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  7. Jianheng Li
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  8. Haitao Qi
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  9. Zhen Feng
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  10. Guoping Tian
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  11. Yuehui Shang
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  12. Yongqiang Liu
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  13. Yali Li
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  14. Mingwen Yuan
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  15. Xiaobai Li
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Corresponding author

Correspondence to Weilian Guo.

Additional information

__________

Translated from Chinese Journal of Semiconductors, 2006, 27(11): 1974–1980 [译自: 半导体学报]

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Cite this article

Guo, W., Liang, H., Song, R. et al. The design and fabrication on gate type resonant tunneling transistor. Front. Electr. Electron. Eng. Ch 3, 227–233 (2008). https://doi.org/10.1007/s11460-008-0029-z

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  • DOI: https://doi.org/10.1007/s11460-008-0029-z

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