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Energy transfer process between Eu3+ and wide-band-gap SnO2 nanocrystals in silica films studied by photoluminescence excitation and time-resolved photoluminescence techniques

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Chinese Science Bulletin

Abstract

Eu3+ ions embedded in silica thin films co-doped with SnO2 nanocrystals were fabricated by sol–gel and spin-coating methods. SnO2 nanocrystals with controllable sizes were synthesized through precisely controlling the Sn concentrations. The influences of doping and annealing conditions on the photoluminescence intensity from SnO2 nanocrystals are systematically investigated. The effective energy transfer from the defect states of SnO2 nanocrystals to nearby Eu3+ ions has revealed by the selective photoluminescence excitation spectra. The efficiency of the Förster resonance energy transfer is evaluated by the time-resolved photoluminescence measurements, which is about 29.1 % based on the lifetime tests of the SnO2 emission.

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Acknowledgments

This work was supported by the National Basic Research Program of China (2013CB632101) and the National Natural Science Foundation of China (11274155).

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Authors and Affiliations

  1. National Laboratory of Solid State Microstructures, Department of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China

    Xiaowei Zhang, Pei Zhang, Shaobing Lin, Jun Xu, Tao Lin, Ling Xu & Kunji Chen

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  1. Xiaowei Zhang
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  2. Pei Zhang
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  3. Shaobing Lin
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  4. Jun Xu
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  5. Tao Lin
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  6. Ling Xu
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  7. Kunji Chen
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Corresponding author

Correspondence to Jun Xu.

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SPECIAL TOPIC: Wide Bandgap Semiconductor Materials and Devices

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Zhang, X., Zhang, P., Lin, S. et al. Energy transfer process between Eu3+ and wide-band-gap SnO2 nanocrystals in silica films studied by photoluminescence excitation and time-resolved photoluminescence techniques. Chin. Sci. Bull. 59, 1285–1290 (2014). https://doi.org/10.1007/s11434-014-0168-y

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  • DOI: https://doi.org/10.1007/s11434-014-0168-y

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