Chinese Science Bulletin

, Volume 59, Issue 4, pp 369–373 | Cite as

Effect of substrate miscut on the electron mobility in InSb(001) structures on Ge and Ge-on-insulator substrates

  • M. C. Debnath
  • T. D. Mishima
  • M. B. Santos
  • K. Hossain
Article Condensed Matter Physics
  • 42 Downloads

Abstract

InSb epilayers and InSb/Al0.20In0.80Sb quantum wells were grown on Ge(001) substrates and Ge-on-insulator (GeOI)-on-Si(001) substrates by molecular beam epitaxy. Growth on both on-axis and 4°-off-axis substrate orientations was studied. Anti-phase domains were formed when InSb films were grown on on-axis substrates, but suppressed significantly by the use of 4°-off-axis substrates. Such off-axis substrates also reduced the densities of micro-twin defects and threading dislocations. The defect reduction resulted in an increase in the room-temperature electron mobility from 37,000 to 59,000 cm2/Vs in 4.0-μm-thick InSb epilayers and from 10,000 to 20,000 cm2/Vs in 25-nm-thick InSb quantum wells on Ge(001) and GeOI-on-Si(001) substrates.

Keywords

InSb Ge-on-insulator Molecular beam epitaxy Electron mobility 

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Copyright information

© Science China Press and Springer-Verlag Berlin Heidelberg 2013

Authors and Affiliations

  • M. C. Debnath
    • 1
  • T. D. Mishima
    • 1
  • M. B. Santos
    • 1
  • K. Hossain
    • 2
  1. 1.Homer L. Dodge Department of Physics and Astronomy, and Center for Semiconductor Physics in NanostructuresUniversity of OklahomaNormanUSA
  2. 2.Amethyst Research, Inc.ArdmoreUSA

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