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Semiconductor quantum dot-doped glass as spectral converter for photovoltaic application

  • Article
  • Optics
  • Published:
Chinese Science Bulletin

Abstract

In this article, we focus on using the multiexciton generation (MEG) effect of quantum dot (QD) to realize quantum cutting of high-energy photons which will give rise to a remarkable increase of total photon number. To avoid the complicated solving of Schrödinger equation, we take approximations and develop a method for fast evaluating the quantum efficiency of MEG process. On this basis, we calculate the detailed balance limit of efficiency of Si single-junction solar cell with Si QD-doped glass placed on top of it as a spectral converter layer. It shows that the efficiency will reach 36 % which is 6 % higher than that without the converter layer. We have also explored the influence of QD radius, QD-doping density, QD, and host material, device working temperature on the efficiency.

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Acknowledgments

This study was supported by the National Natural Science Foundation of China (YG 61177056).

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Authors and Affiliations

  1. State Key Laboratory of Advanced Optical Communication System and Networks, Shanghai Jiao Tong University, Shanghai, 200240, China

    Lu Sun & Chun Jiang

Authors
  1. Lu Sun
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  2. Chun Jiang
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Correspondence to Chun Jiang.

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Sun, L., Jiang, C. Semiconductor quantum dot-doped glass as spectral converter for photovoltaic application. Chin. Sci. Bull. 59, 16–22 (2014). https://doi.org/10.1007/s11434-013-0017-4

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  • DOI: https://doi.org/10.1007/s11434-013-0017-4

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