Abstract
Dual-wavelength light-emitting diodes (DW-LEDs) with dip-shaped quantum wells have been studied by numerical simulation. The emission spectra, light output power, carrier concentration in the quantum wells and internal quantum efficiency are investigated. The simulation results indicate that the DW-LEDs with dip-shaped quantum wells perform better than conventional LEDs with rectangular quantum wells in terms of light output power, leakage current and efficiency droop. These improvements in the electrical and optical characteristics are mainly attributed to the alleviation of the electrostatic field in the dip-shaped quantum wells.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
Kern R S, Chen C H, Fletcher R M, et al. Hall-effect characterization of III-V nitride semiconductors for high efficiency light emitting diodes. Mater Sci Eng, 1999, B59: 211–217
Schubert E F, Kim J K. Solid-state light sources getting smart. Science, 2005, 308: 1274–1278
Li Y L, Huang Y R, Lai Y H. Efficiency droop behaviors of InGaN/ GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness. Appl Phys Lett, 2007, 91: 181113
Kim M H, Schubert M F, Dai Q, et al. Origin of efficiency droop in GaN-based light-emitting diodes. Appl Phys Lett, 2007, 91: 183507
Schubert M F, Xu J, Kim J K, et al. Polarization-matched GaInN/ AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop. Appl Phys Lett, 2008, 93: 041102
Kuo Y K, Tsai M C, Yen S H. Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer. Opt Commun, 2009, 282: 4252–4255
Tao Y B, Chen Z Z, Zhang F F, et al. Polarization modification in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers. J Appl Phys, 2010, 107: 103529
Chang S P, Lu T C, Zhuo L F, et al. Low droop nonpolar GaN/InGaN light emitting diode grown on m-plane GaN substrate. J Electrochem Soc, 2010, 157: H501–H503
Takeuchi T, Sota S, Katsuragawa M, et al. Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wells. Jpn J Appl Phys, 1997, 36: L382–L382
Zhang Y Y, Fan G H. Theoretical study of GaN interval layers and quantum well barrier layers of different doping types in dual-wavelength LED (in Chinese). Acta Phys Sin, 2011, 60: 018502
Zhang Y Y, Fan G H, Zhang Y, et al. Effect of spectrum-controol in dual-wavelength light-emitting diode by doped GaN (in Chinese). Acta Phys Sin, 2011, 60: 028503
Zhao H P, Liu G Y, Li X H, et al. Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile. Appl Phys Lett, 2009, 95: 061104
Zhao H, Arif R A, Tansu N. Design analysis of staggered InGaN quantum wells light-emitting diodes at 500–540 nm. IEEE J Sel Top Quant Electr, 2009, 15: 1104–1114
Stringfellow G B, Craford M G. High Brightness Light Emitting Diodes. New York: Academic Press, 1997. 412
Vurgaftman I, Meyer J R. Band parameters for nitrogen-containing semiconductors. J Appl Phys, 2003, 94: 3675–3691
Lu T P, Li S T, Zhang K, et al. Simulation study of blue InGaN light-emitting diodes with dip-shaped quantum wells. Chin Phys, 2011, 10: 108504
Park S H, Ahn D, Koo B H, et al. Dip-shaped InGaN/GaN quantum-well light-emitting diodes with high efficiency. Appl Phys Lett, 2009, 95: 063507
Author information
Authors and Affiliations
Corresponding author
Additional information
This article is published with open access at Springerlink.com
Rights and permissions
This article is published under an open access license. Please check the 'Copyright Information' section either on this page or in the PDF for details of this license and what re-use is permitted. If your intended use exceeds what is permitted by the license or if you are unable to locate the licence and re-use information, please contact the Rights and Permissions team.
About this article
Cite this article
Xu, Y., Fan, G., Zhou, D. et al. Advantage of dual wavelength light-emitting diodes with dip-shaped quantum wells. Chin. Sci. Bull. 57, 2562–2566 (2012). https://doi.org/10.1007/s11434-012-5211-2
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11434-012-5211-2