Abstract
Wafer-scale graphene on SiC with uniform structural and electrical features is needed to realize graphene-based radio frequency devices and integrated circuits. Here, a continuous bi/trilayer of graphene with uniform structural and electrical features was grown on 2 inch 6H-SiC (0001) by etching before and after graphene growth. Optical and atomic force microscopy images indicate the surface morphology of graphene is uniform over the 2 inch wafer. Raman and transmittance spectra confirmed that its layer number was also uniform. Contactless resistance measurements indicated the average graphene sheet resistance was 720 Ω/□ with a non-uniformity of 7.2%. Large area contactless mobility measurements gave a carrier mobility of about 450 cm2/(V s) with an electron concentration of about 1.5×1013 cm−2. To our knowledge, such homogeneous morphology and resistance on wafer scale are among the best results reported for wafer-scale graphene on SiC.
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Jia, Y., Guo, L., Lin, J. et al. Wafer-scale graphene on 2 inch SiC with uniform structural and electrical characteristics. Chin. Sci. Bull. 57, 3022–3025 (2012). https://doi.org/10.1007/s11434-012-5161-8
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DOI: https://doi.org/10.1007/s11434-012-5161-8