Abstract
Based on measurement of homogenization temperature of inclusions and Raman spectral analysis, high density methane inclusions were discovered in the Triassic reservoirs of Puguang Gasfield. The methane inclusions show a homogenization temperature Th = −117.5–−118.1°C, a corresponding density of 0.3455–0.3477 g/cm3, and a Raman scatter peak v 1 shift varying between 2911–2910 cm−1, which signifies a very high density of methane inclusions. The salt water inclusions paragenetic with methane inclusions show a homogenization temperature Th=170–180°C. Based on the composition of methane inclusions as determined by Raman spectra, PVTsim software was used to simulate the trapping pressure for high density methane inclusions in geologic history, and the trapping pressure was found to be as high as 153–160 MPa. Even though Puguang Gasfield is currently a gas pool of normal pressure, and the fluid pressure for the gas pool ranges between 56–65 MPa. However, data from this study indicates that remarkable overpressure may be generated at the stage of mass production of gas cracked from oils in Cretaceous, as high density methane inclusions constitute key evidence for overpressure in gas pool in geologic history. Meanwhile, discovery of small amounts of H2S, CO2 or heavy hydrocarbon in part of the high density methane inclusions indicates that the geochemical environment for trapping of inclusions may be related to formation of H2S. Therefore, the observation results can help to explore the thermochemical sulfate reduction (TSR) conditions for oil cracking and H2S formation.
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Supported by the National Foundation for Outstanding Young Scientists (Grant No. 40625011), Knowledge Innovation Program of Chinese Academy of Sciences (Grant Nos. KZCX2-YW-114 and KZCX2-YW-Q05-03) and GIGCAS3rd Stage Innovation Program (Grant No. 5407341801)
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Liu, D., Dai, J., Xiao, X. et al. High density methane inclusions in Puguang Gasfield: Discovery and a T-P genetic study. Chin. Sci. Bull. 54, 4714–4723 (2009). https://doi.org/10.1007/s11434-009-0582-8
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DOI: https://doi.org/10.1007/s11434-009-0582-8