Abstract
GaAs-based metamorphic HEMTs (MHEMT) consist of GaAs substrates and InP-based epitaxial structure, and have the advantages of both InP HEMT’s excellent performances and GaAs-based HEMT’s mature processes. GaAs-based MHEMTs were applied to millimeter-wave low-noise, high-power applications and systems. The current gain cut-off frequency (f T) and the maximum oscillation frequency (f max) are important performance parameter of GaAs-based MHEMTs, and they are limited by the gate-length mainly. Electron beam lithography is one of the lithography technologies which can be used to realize the deep submicron gate-length. The 200 nm gate-length GaAs-based MHEMTs have been fabricated by electron beam lithography. In order to reduce the parasite gate capacitance and gate resistance, a trilayer resist structure was used to pattern the T-gate resist profile. Excellent DC, high frequency and power performances have been obtained. F T and f max are 105 GHz, 70 GHz respectively. The research is very helpful to obtain higher performance GaAs-based MHEMTs.
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References
Ying C H, Sun T L, Hsuan C L, et al. The design and deployment of 40 Gbit/s experimental network. In: Circuits and Systems Proceedings, 2006. 1923–1927
Brehm G E. Trends in microwave/millimeter-wave front-end technology. In: European microwave integrated circuits conference, 2006. 1–4
Mahonen P, Saarinen T, Shelby Z, et al. Wireless Internet over LMDS: architecture and experimental implementation. Communications Magazine, 2001, 39(5): 126–132
Nordbotten A. LMDS systems and their application. Communications Magazine, 2000, 38(6): 150–154
Bodereau F, Miquel C, Debarge C, et al. Ka band converter assemblies for next telecommunication satellites. In: 2005 European Microwave Conference, 2005
Kyoungwoon K, Wooyeol C, Sungwon K, et al. A 77 GHz Transceiver for Automotive Radar System Using a 120 nm In0.4AlAs/In0.35GaAs Metamorphic HEMTs. In: IEEE Compound Semiconductor Integrated Circuit Symposium, 2006. 201–204
Nicolson S T, Tang K A, Yau K H K, et al. A Low-Voltage 77-GHz Automotive Radar Chipset. In: IEEE/MTT-S International Microwave Symposium, 2007. 487–490
Yoshimi Y, Akira E, Keisuke S, et al. Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs With an Ultrahigh fT of 562 GHz. IEEE Elec Dev Lett, 2002, 23(10): 573–575
Leuther A, Weber R, Dammann M, et al. Metamorphic 50 nm InAs-channel HEMT. In: Indium Phosphide and Related Material, 2005. 129–132
Chanh N, Miroslav M. The state-of-the-art of GaAs and InP power devices and amplifiers. IEEE Trans Elec Dev, 2001, 48(3): 472–478
Campos R Y, Schworer C, Leuther A, et al. G-band metamorphic HEMT-based frequency multipliers. IEEE Trans Micr Theo Techn, 2006, 54(7): 2983–2992
Tessmann A. 220 GHz metamorphic HEMT amplifier MMICs for high resolution imaging applications. IEEE J Solid-State Circ, 2005, 40(10): 2070–2076
Wang G W, Chen Y K, Schaff W J, et al. A 0.1 μm gate In0.5Al0.5As/In0.5Ga0.5As MODFET fabricated on GaAs substrates. IEEE Trans Elec Dev, 1988, 35(7): 818–823
Kang S L, Young S K, Yun K H, et al. 35-nm zigzag T-Gate In0.52Al0.48As/In0.53Ga0.47As metamorphic GaAs HEMTs with an ultrahigh fmax of 520 GHz. IEEE Elec Dev Lett, 2007, 28(8): 672–675
Shi H F, Liu X C, Zhang H Y, et al. 0.25 μm GaAs-based MHEMT device. Chin Journ of Sem, 2004, 25(3): 325–328
Chen X J, Wu X, Li F X, et al. GaAs-based enhanced-Mode metamorphic high electron mobility transistor by using buried Pt-Schottky gate. Chin Journ of Sem, 2004, 25(9): 1137–1142
Li X J, Ao J P, Zeng Q M, et al. DC performance of GaAs-based InAIAs/InGaAs MHEMT. Res Prog SSE, 2002, 22(2): 235–237
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Supported by the National Basic Research Program of China (Grant No. G2002CB311901), Equipment Advance Research Project (Grant No. 61501050401C) and Institute of Microelectronics, Chinese Academy of Sciences, Dean Fund (Grant No. 06SB124004)
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Xu, J., Zhang, H., Wang, W. et al. 200 nm gate-length GaAs-based MHEMT devices by electron beam lithography. Chin. Sci. Bull. 53, 3585–3589 (2008). https://doi.org/10.1007/s11434-008-0497-9
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DOI: https://doi.org/10.1007/s11434-008-0497-9