Abstract
In recent years, the memristor has been widely considered an emerging device, but it has rarely been simulated. An obstacle is the change in the intrinsic atomic level when it works. Using the density functional theory (DFT), this atomic level change in structure cannot be demonstrated. Using molecular dynamics (MD), memristor electronic transport properties cannot be calculated. In this study, we propose a novel multiscale simulation framework merging MD, DFT, and the nonequilibrium Green’s function method, which can reveal not only a memristor’s basic working mechanism but also its transport character. To verify our framework’s availability in guiding innovative memristor design, a new type of memristor, a planar monolayer MoS2-based memristor, is simulated for the first time. The popped S atoms’ effect on its carrier transport is revealed, which clarifies the working mechanism of the planar monolayer MoS2-based memory device. We hope that this framework can shed light on the analysis and design of low-dimensional memristors.
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References
A. C. Torrezan, J. P. Strachan, G. Medeiros-Ribeiro, and R. S. Williams, Nanotechnology 22, 485203 (2011).
Y. R. Jeon, Y. Abbas, A. S. Sokolov, S. Kim, B. Ku, and C. Choi, ACS Appl. Mater. Interfaces 11, 23329 (2019).
M. J. Lee, C. B. Lee, D. Lee, S. R. Lee, M. Chang, J. H. Hur, Y. B. Kim, C. J. Kim, D. H. Seo, S. Seo, U. I. Chung, I. K. Yoo, and K. Kim, Nat. Mater. 10, 625 (2011).
Y. Abbas, R. B. Ambade, S. B. Ambade, T. H. Han, and C. Choi, Nanoscale 11, 13815 (2019).
V. Milo, C. Zambelli, P. Olivo, E. Pérez, M. K. Mahadevaiah, O. G. Ossorio, C. Wenger, and D. Ielmini, APL Mater. 7, 081120 (2019).
B. Ku, B. Koo, A. S. Sokolov, M. J. Ko, and C. Choi, J. Alloys Compd. 833, 155064 (2020).
R. Zhu, S. Chang, H. Wang, Q. Huang, J. He, and F. Yi, IEEE Electron Device Lett. 38, 1367 (2017).
R. Zhu, S. Ye, Z. Tang, P. Lin, Q. Huang, H. Wang, J. He, and S. Chang, IEEE Access 7, 47472 (2019).
R. Zhu, Z. Tang, S. Ye, Q. Huang, L. Guo, and S. Chang, IEEE Trans. Electron Devices 68, 602 (2021).
A. S. Sokolov, H. Abbas, Y. Abbas, and C. Choi, J. Semicond. 42, 013101 (2021).
S. Pan, Q. Huang, H. Wang, J. He, and S. Chang, Microelectron. Eng. 251, 111668 (2022).
J. Lee, C. Du, K. Sun, E. Kioupakis, and W. D. Lu, ACS Nano 10, 3571 (2016).
A. Abnavi, R. Ahmadi, A. Hasani, M. Fawzy, M. R. Mohammadzadeh, T. De Silva, N. Yu, and M. M. Adachi, ACS Appl. Mater. Interfaces 13, 45843 (2021).
U. Das, S. Bhattacharjee, B. Mahato, M. Prajapat, P. Sarkar, and A. Roy, Mater. Sci. Semicond. Process. 107, 104837 (2020).
Y. Yang, H. Du, Q. Xue, X. Wei, Z. Yang, C. Xu, D. Lin, W. Jie, and J. Hao, Nano Energy 57, 566 (2019).
S. Mitra, A. Kabiraj, and S. Mahapatra, npj 2D Mater. Appl. 5, 33 (2021).
N. Onofrio, D. Guzman, and A. Strachan, Nat. Mater. 14, 440 (2015).
Y. L. Chen, B. Balraj, P. F. Chung, C. Sivakumar, W. J. Lee, and M. S. Ho, Appl. Phys. Lett. 118, 083502 (2021).
L. Li, W. Li, C. Zhu, and L. F. Mao, Eur. Phys. J. B 91, 92 (2018).
L. Li, W. Li, C. Zhu, and L. F. Mao, Phys. Status Solidi B 257, 1900455 (2020).
K. H. Xue, Y. Li, H. L. Su, J. H. Yuan, Y. Li, Z. R. Wang, B. Zhang, and X. S. Miao, J. Appl. Phys. 124, 152125 (2018).
E. A. Khera, H. Ullah, F. Hussain, M. Imran, R. M. A. Khalil, M. A. Sattar, A. M. Rana, C. Mahata, and S. Kim, Physica E 119, 114025 (2020).
B. Xiao, X. Yu, and J. Cheng, ACS Appl. Mater. Interfaces 8, 31978 (2016).
J. Liang, Q. Cui, and H. Yang, Phys. Rev. B 102, 220409 (2020).
H. Yang, J. Liang, and Q. Cui, Nat. Rev. Phys. 5, 43 (2023).
D. Yu, Y. Ga, J. Liang, C. Jia, and H. Yang, Phys. Rev. Lett. 130, 056701 (2023).
H. Yildirim, and R. Pachter, ACS Appl. Electron. Mater. 1, 467 (2019).
F. Ducry, J. Aeschlimann, and M. Luisier, Nanoscale Adv. 2, 2648 (2020).
J. Akola, K. Konstantinou, and R. O. Jones, Phys. Rev. Mater. 6, 035001 (2022).
T. Hynninen, T. Musso, and A. S. Foster, Model. Simul. Mater. Sci. Eng. 24, 035022 (2016).
E. V. Sukhanova, D. G. Kvashnin, and Z. I. Popov, Nanoscale 12, 23248 (2020).
A. Ostadhossein, A. Rahnamoun, Y. Wang, P. Zhao, S. Zhang, V. H. Crespi, and A. C. T. van Duin, J. Phys. Chem. Lett. 8, 631 (2017).
X. Wu, R. Ge, P. A. Chen, H. Chou, Z. Zhang, Y. Zhang, S. Banerjee, M. H. Chiang, J. C. Lee, and D. Akinwande, Adv. Mater. 31, 1806790 (2019).
M. Qiu, S. Ye, W. Wang, J. He, S. Chang, H. Wang, and Q. Huang, Superlatt. Microstruct. 133, 106199 (2019).
M. Liu, J. Shi, Y. Li, X. Zhou, D. Ma, Y. Qi, Y. Zhang, and Z. Liu, Small 13, 1602967 (2017).
D. Li, B. Wu, X. Zhu, J. Wang, B. Ryu, W. D. Lu, W. Lu, and X. Liang, ACS Nano 12, 9240 (2018).
V. K. Sangwan, D. Jariwala, I. S. Kim, K. S. Chen, T. J. Marks, L. J. Lauhon, and M. C. Hersam, Nat. Nanotech. 10, 403 (2015), arXiv: 1504.01416.
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This work was supported by the National Natural Science Foundation of China (Grant Nos. 62074116, 61874079, and 81971702) and the Luojia Young Scholars Program. The numerical calculations in this paper have been performed on the supercomputing system in the Supercomputing Center of Wuhan University.
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Pan, S., Liu, L., Huang, Q. et al. A novel multiscale simulation framework for low-dimensional memristors. Sci. China Phys. Mech. Astron. 66, 276811 (2023). https://doi.org/10.1007/s11433-022-2082-7
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DOI: https://doi.org/10.1007/s11433-022-2082-7