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Strain effect on the orientation-dependent harmonic spectrum of monolayer aluminum nitride

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Abstract

In this study, we theoretically investigate the strain effect on the orientation-dependent high-order harmonic generation (HHG) of monolayer aluminum nitride (AlN) by solving the multiband semiconductor Bloch equations in strong laser fields. Our simulations denote that the efficiency of the orientation-dependent HHG is considerably enhanced when a 15% biaxial tensile strain is applied to AlN, which is attributed to the downshifting energy level of the conduction band. Furthermore, the odd-even feature in the orientation-dependent high harmonic spectra owing to the strain is considerably different when compared with that in the case without strain. The enhanced quantum interference between different energy bands in strained AlN around the Γ-M direction is responsible for the observed odd-even distributions of the orientation-dependent HHG. This study helps to better understand the HHG in solids by tuning their electronic structures.

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Authors and Affiliations

  1. Department of Applied Physics, Nanjing University of Science and Technology, Nanjing, 210094, China

    ZiWen Wang, ShiCheng Jiang, GuangLu Yuan, Tong Wu, Cheng Li, Chen Qian, Cheng Jin, Chao Yu, WeiJie Hua & RuiFeng Lu

  2. State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China

    RuiFeng Lu

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  1. ZiWen Wang
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  8. Chao Yu
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Correspondence to Chao Yu, WeiJie Hua or RuiFeng Lu.

Additional information

This work was supported by the National Natural Science Foundation of China (Grant Nos. 11974185, 11704187, 11774175, and 11834004), and the Natural Science Foundation of Jiangsu Province (Grant No. BK20170032).

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Wang, Z., Jiang, S., Yuan, G. et al. Strain effect on the orientation-dependent harmonic spectrum of monolayer aluminum nitride. Sci. China Phys. Mech. Astron. 63, 257311 (2020). https://doi.org/10.1007/s11433-019-1467-2

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