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Formation of a monolayer h-BN nanomesh on Rh (111) studied using in-situ STM

  • GuoCai Dong
  • Yi Zhang
  • Joost W. M. Frenken
Article

Abstract

As a member of the 2D family of materials, h-BN is an intrinsic insulator and could be employed as a dielectric or insulating inter-layer in ultra-thin devices. Monolayer h-BN can be synthesized on Rh (111) surfaces using borazine as a precursor. Using in-situ variable-temperature scanning tunneling microscopy (STM), we directly observed the formation of h in real-time. By analyzing the deposition under variable substrate temperatures and the filling rate of the h-BN overlayer vacant hollows during growth, we studied the growth kinetics of how the borazine molecules construct the h-BN overlayer grown on the Rh surface.

Keywords

hexagonal boron nitride STM nanomesh 

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Copyright information

© Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Kamerlingh Onnes LaboratoryLeiden UniversityLeidenThe Netherlands
  2. 2.National Laboratory of Solid State Microstructure, School of Physics, Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjingChina
  3. 3.Jiangnan Graphene Research InstituteChangzhouChina
  4. 4.Advanced Research Center of NanolithographyAmsterdamThe Netherlands

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