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CVD synthesis of nitrogen-doped graphene using urea

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  • Condensed Matter Physics
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Abstract

This work provides an effective low-cost synthesis and in-depth mechanistic study of high quality large-area nitrogen-doped graphene (NG) films. These films were synthesized using urea as nitrogen source and methane as carbon source, and were characterized by scanning electron microscopy (SEM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). The N doping level was determined to be 3.72 at.%, and N atoms were suggested to mainly incorporated in a pyrrolic N configuration. All distinct Raman peaks display a shift due to the nitrogen-doping and compressive strain. The increase in urea concentration broadens the D and 2D peak’s Full Width at Half Maximum (FWHM), due to the decrease of mean free path of phonons. The N-doped graphene exhibited an n-type doping behavior with a considerably high carrier mobility of about 74.1 cm2/(V s), confirmed by electrical transport measurements.

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Authors and Affiliations

  1. Department of Physics, Laboratory of Nanoscale Condense Matter Physics and State Key Laboratory of Physical Chemistry of Solid Surfaces, Xiamen University, Xiamen, 361005, China

    CanKun Zhang, WeiYi Lin, ZhiJuan Zhao, PingPing Zhuang, LinJie Zhan, YingHui Zhou & WeiWei Cai

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  1. CanKun Zhang
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  2. WeiYi Lin
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  3. ZhiJuan Zhao
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  7. WeiWei Cai
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Correspondence to WeiWei Cai.

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Recommended by ZHAO Hong (Associate Editor)

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Zhang, C., Lin, W., Zhao, Z. et al. CVD synthesis of nitrogen-doped graphene using urea. Sci. China Phys. Mech. Astron. 58, 107801 (2015). https://doi.org/10.1007/s11433-015-5717-0

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  • DOI: https://doi.org/10.1007/s11433-015-5717-0

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