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Double-peaked decay of transient photovoltage in nanoporous ZnO/n-Si photodetector

Abstract

In the present work, a nanoporous ZnO/n-Si structure has been proposed as a new type infrared photodetector. Triggered by one laser pulse with wavelength of 1064 nm, this structure exhibits a double-peak decay of transient photovoltage. Also, the time interval between these two peaks increases linearly with the increase of irradiated pulsed energy, indicating the promising application of this hetero-junction in photo-energy detection of infrared pulsed laser. A possible mechanism for this particular photoresponse has been discussed.

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Correspondence to Kun Zhao.

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Recommended by JIN KuiJuan (Associate Editor)

These authors contributed equally to this work

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Liu, H., Fu, C. & Zhao, K. Double-peaked decay of transient photovoltage in nanoporous ZnO/n-Si photodetector. Sci. China Phys. Mech. Astron. 57, 1206–1208 (2014). https://doi.org/10.1007/s11433-014-5459-4

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Keywords

  • ZnO
  • sol-gel
  • photovoltage
  • photodetector