Abstract
In order to promote the light output powers of GaN-based light emitting diodes (LEDs), two kinds of novel corrosive liquids have been developed in this paper to roughen the surface of the indium tin oxide (ITO) current spreading layer of LEDs. As a result, the textured transparent ITO layer greatly enhanced the external quantum efficiency of the LEDs. Provided that a wafer sample was dipped in a kind of corrosive liquid developed by us for only about 60 s, the light output powers of the LEDs can be promoted by 24.7%, compared with conventional GaN-based LEDs. It is obvious that the presented method is simple, rapid and cost-effective.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Nakamura S, Fasol G. The Blue Laser Diode. Berlin: Springer, 1997
Zukauskasm A, Shur M S, Gaska R. Introduction to Solid-State Light. Hoboken: Wiley, 2002
Narukawa Y, Narita J, Sakamoto T, et al. Ultra-high efficiency white light emitting diodes. Jpn J Appl Phys, 2006, 45: L1084–L1086
Schubert E F. Light-Emitting Diodes. Cambridge: Cambridge University Press, 2003
Kawaguchi Y, Nishizono K, Lee J S, et al. Light extraction simula simulation of surface-textured light-emitting diodes by finite-difference time-domain method and ray-tracing method. Jpn J Appl Phys, 2007, 46: 31–34
Kim D H, Cho C, Roh Y G, et al. Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns. Appl Phys Lett, 2005, 87: 203508
Jang H W, Kim S Y, Lee J L. Mechanism for Ohmic contact formation of oxidized Ni/Au on p-type GaN. J Appl Phys, 2003, 94: 1748–1751
Lee Y J, Kuo H C, Wang S C, et al. Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening. Photonics Technol Lett, 2005, 17: 2289–2291
Wang P, Gan Z Y, Liu S. Improved light extraction of GaN-based light-emitting diodes with surface-patterned ITO. Opt Laser Technol, 2009, 41: 823–826
Horng R H, Yang C C, Wu J Y, et al. GaN-based light-emitting diodes with indium tin oxide texturing window layers using natural lithography. Appl Phys Lett, 2005, 86: 221101
Ishida F, Yoshimura K, Hoshino K, et al. Improved light extraction efficiency of GaN-based light emitting diodes by using needle-shape indium tin oxide p-contact. Phys Status Solidi C, 2008, 5: 2083–2085
Cao X A, Zhang A P, Dang G T, et al. Plasma damage in p-GaN. J Electron Mater, 2000, 29: 256–261
Leem D S, Lee T, Seong T Y. Enhancement of the light output of GaN-based light-emitting diodes with surface-patterned ITO electrodes by maskless wet-etching. Solid State Electron, 2007, 51: 793–796
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Li, Y., Li, X., Zhang, T. et al. Enhancement of light output powers of GaN-based light emitting diodes with textured indium tin oxide transparent layer by using corrosive liquid. Sci. China Phys. Mech. Astron. 54, 1787 (2011). https://doi.org/10.1007/s11433-011-4461-3
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s11433-011-4461-3