Abstract
The interaction between exciton and confined longitudinal optical (LO) phonons, interface optical (IO) phonons in an asymmetric Ga1−x Al x As/GaAs/Ga0.7Al0.3As square quantum well is investigated. By applying the LLP-like transformation and variational approach, the numerical results are obtained as functions of the well width and asymmetric-degree of well. The exciton-optical phonons interaction-energy has a minimum value with the increase of the well width. It is demonstrated that the LO-phonon energy-contribution increases while the IO-phonon contribution decreases as the well width increases gradually. The energy-contribution of LO-phonon in symmetric and asymmetric square quantum well does not have too much difference, but the IO-phonon contribution varies apparently. The exciton binding-energy monotonically decreases with the increase of the well width and is proportional to the left-barrier height.
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Deng, Y., Tian, Q. Effects of confined longitudinal and interface optical phonons on excitons in an asymmetric quantum well. Sci. China Phys. Mech. Astron. 54, 1593 (2011). https://doi.org/10.1007/s11433-011-4410-1
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DOI: https://doi.org/10.1007/s11433-011-4410-1