Abstract
Typically, highly p-doped (2×1018 cm−3) poly-Si films fabricated by the aluminum induced layer exchange (ALILE) process are not suitable for solar cell absorber layers. In this paper, the fabrication of high-quality, continuous polycrystalline silicon (poly-Si) films with lower doping concentrations (2×1016 cm−3) using aluminum-induced crystallization (AIC) is reported. Secondary-ion-mass spectroscopy (SIMS) results showed that annealing at different temperature profiles leads to a variety of Al concentrations. Hall Effect measurements revealed that Al dopant concentration depends on the annealing temperature and temperature profile. Raman spectral analysis indicated that samples prepared via AIC contain some regions with small grains.
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Fortunato G. Polycrystalline silicon thin-film transistors: A continuous evolving technology. Thin Solid Films, 1997, 296: 82–90
Bergmann R B, Oswald G, Albrecht M, et al. Solid-phase crystallized Si films on glass substrates for thin film solar cells. Sol Energy Mater Sol Cells, 1997, 46: 147–155
Ishikawa K, Ozawa M, Oh C H, et al. Excimer-laser-induced lateral-growth of silicon thin-films. Jpn J Appl Phys, 1998, 37: 731–736
Zhang Y X, Lu J X, Yang S E, et al. Polycrystalline silicon films prepared by rapid photo-thermal annealing. Semicond Optoelectr, 2005, 2: 128–130
Zhonghe J, Gururaj A, Bhat M Y, et al. Nickel induced crystallization of amorphous silicon thin films. J Appl Phys, 1998, 84: 194–200
Haque M S, Naseem H A, Brown W D. Interaction of aluminum with hydrogenated amorphous silicon at low temperatures. J Appl Phys, 1994, 75: 3928–3938
Schneider J, Schneider A, Sarikov A, et al. Aluminum-induced crystallization: Nucleation and growth process. J Non-Cryst Solids, 2006, 352: 972–975
Wang C L, Fan D W, Sun S, et al. Low-temperature (<100°C) poly-Si thin films fabrication on glass. Chin Phys Lett, 2009, 26: 01802–01806
Nast O, Wenham S R. Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminum-induced crystallization. J Appl Phys, 2000, 88: 124–132
Qi G J, Zhang S, Tang T T, et al. Experimental study of aluminum-induced crystallization of amorphous silicon thin films. Surf Coat Technol, 2005, 198: 300–303
Malinovska D D, Grigorov V, Dimitrova M N, et al. Investigation of structural properties of poly-Si thin films obtained by aluminium induced crystallization in different atmospheres. Thin Solid Films, 2006, 501: 358–361
Ray S, Mukhopadhyay S, Saha S C. Properties of polycrystalline silicon films prepared from fluorinated precursors. Thin Solid Films, 1999, 337: 7–11
Pihan E, Slaoui A, Rocai Cabarrocas P, et al. Polycrystalline silicon films by aluminium-induced crystallisation: Growth process vs. silicon deposition method. Thin Solid Films, 2004, 451–452: 328–333
Schneider J, Heimburger T R, Klein J. Aluminum-induced crystallization of amorphous silicon: Influence of temperature profiles. Thin Solid Films, 2005, 487: 107–112
Nast O, Brehme S, Pritchard S, et al. Aluminum-induced crystallization of silicon on glass for thin-film solar cells. Sol Energy Mater Sol Cells, 2001, 65: 385–392
Nast S, Brehme D, Neuhaus S R, et al. Polycrystalline silicon thin films on glass by aluminum-induced crystallization. IEEE Trans Electron Dev, 1999, 46: 2062–2068
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Wang, C., Fan, D., Wang, C. et al. Poly-Si films with low aluminum dopant containing by aluminum-induced crystallization. Sci. China Phys. Mech. Astron. 53, 111–115 (2010). https://doi.org/10.1007/s11433-010-0084-3
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DOI: https://doi.org/10.1007/s11433-010-0084-3