Abstract
ZnO nanostructures with three kinds of morphologies, namely, tetrapod-, rod-, and sheet-like shape, are synthesized by chemical vapor deposition, conventional solution-phase, and hydrothermal methods, respectively. The fluorescence measurements display that the spectra of these nanostructures exhibit similar unexpected change laws with the altering excitation intensity. It is observed that when the excitation intensity increases, for the green emission band, the peak position shows a small blue-shift, the width turns broader, and the intensity grows first stronger and then weaker; for the UV emission band, the peak position exhibits a significant red-shift, and the width and intensity have the similar behaviors with those of the green band. Additionally, the relative intensity of green emission to UV emission decreases gradually. It is clarified that the origin of this abnormal phenomenon is ascribed to the local laser heating effect and the high sensitivity of nanostructures to this heating effect.
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References
Huang M H, Mao S, Yang P D, et al. Room-temperature ultraviolet nanowire nanolasers. Science, 2001, 292: 1897–1899
Özgür Ü, Alivov Y I, Liu C, et al. A comprehensive review of ZnO materials and devices. J Appl Phys, 2005, 98: 041301-1–103
Djurišić A B, Choy W C H, Roy V A L, et al. Photoluminescence and EPR of ZnO tetrapod structures. Adv Funct Mater, 2004, 14: 856–864
Djurišić A B, Leung Y H, Optical properties of ZnO nanostructures. Small, 2006, 2: 944–961
Bergman L, Chen X B, Morrison J L, et al. Photoluminescence dynamics in ensembles of wide-band-gap nanocrystallites and powders. J Appl Phys, 2004, 96: 675–682
Yang Y L, Yan H W, Fu Z P, et al. Photoluminescence investigation based on laser heating effect in ZnO-ordered nanostructures. J Phys Chem B, 2006, 110: 846–852
Lautenschlager P, Garriga M, Logothetidis S, et al. Interband critical points of GaAs and their temperature dependence. Phys Rev B, 1987, 35: 9174–9189
Manoodlan A, Woolley J C. Temperature dependence of the energy gap in semiconductors. Can J Phys, 1984, 62: 285–287
Kligshirn C, The luminescence of ZnO under high one- and two-quantum excitation. Phys Status Solidi B-Basic Solid State Phys, 1975, 71: 547–556
Jensen G H, Skettrup T. Absorption edge and urbach’s rule in ZnO. Phys Status Solidi B-Basic Solid State Phys, 1973, 60: 169–173
Yamada Y, Ueki Y, Nakamura K, et al. Stokes shift of biexcitons in AlxGa1−x N epitaxial layers. Phys Rev B, 2004, 70: 195210–195215
Manasreh M O, Friedman D J, Ma W Q. Photoluminescence of metalorganic-chemical-vapor-deposition-grown GaInNAs/GaAs single quantum wells. Appl Phys Lett, 2003, 82: 514–516
Dingle R. Luminescence transitions associated with divalent copper impurities and the green emission from semiconducting zinc oxide. Phys Rev Lett, 1969, 23: 579–581
Manoogian A, Woolley J C. Temperature dependence of the energy gap in semicondutors. Can J Phys, 1984, 62: 285–287
Sun H D, Makino T, Segawa Y. Temperature dependence of excitonic absorption spectra in ZnO/Zn0.88Mg0.12O multiquantum wells grown on lattice-matched substrates. Appl Phys Lett, 2001, 78: 2464–2466
Tanaka T, Hayashida K, Ogawa H. Photoluminescence of iodine-doped ZnTe homoepitaxial layer grown by metalorganic vapor phase epitaxy. J Appl Phys, 2003, 93: 5302–5306
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Supported by the National Basic Research Program of China (Grant No. 2005CB623603)
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Zhang, Y., Zhang, L. Effect of excitation intensity on fluorescence spectra in ZnO nanostructures and its origin. Sci. China Ser. G-Phys. Mech. Astron. 52, 4–12 (2009). https://doi.org/10.1007/s11433-009-0008-2
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DOI: https://doi.org/10.1007/s11433-009-0008-2