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A self-selecting memory element based on a method of interconnected ovonic threshold switching device

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References

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant No. 62174065) and Hubei Provincial Natural Science Foundation of China (Grant No. 2021CFA038). The authors acknowledge the support from Hubei Key Laboratory of Advanced Memories & Hubei Engineering Research Center on Microelectronics.

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Authors and Affiliations

  1. School of Integrated Circuits, Huazhong University of Science & Technology, Wuhan, 430074, China

    Jinyu Wen, Lun Wang, Jiangxi Chen, Hao Tong & Xiangshui Miao

  2. Institute of Artificial Intelligence, Huazhong University of Science & Technology, Wuhan, 430074, China

    Jinyu Wen, Hao Tong & Xiangshui Miao

  3. Hubei Yangtze Memory Laboratories, Wuhan, 430205, China

    Hao Tong & Xiangshui Miao

Authors
  1. Jinyu Wen
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  2. Lun Wang
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  3. Jiangxi Chen
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  4. Hao Tong
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  5. Xiangshui Miao
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Corresponding author

Correspondence to Hao Tong.

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Supporting information

Appendix A. The supporting information is available online at http://www.info.scichina.com and http://www.link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.

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Wen, J., Wang, L., Chen, J. et al. A self-selecting memory element based on a method of interconnected ovonic threshold switching device. Sci. China Inf. Sci. 67, 139403 (2024). https://doi.org/10.1007/s11432-023-3907-x

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  • DOI: https://doi.org/10.1007/s11432-023-3907-x

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