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A Ku-band image-rejection filtering LNA MMIC in 150-nm GaN-on-SiC technology

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A three-stage Ku-band filtering LNA MMIC has been proposed using 150-nm GaN-on-SiC process in this paper. The design method has been detailed. L-C-L π-shape networks have been designed and used as inter-stage matching networks with highpass filtering responses. To further improve the frequency selectivity and out-of-band rejection level, the LNA output matching network has been designed with a transmission zero at the lower frequency band. Then, high out-of-band rejection for image suppression was obtained. For demonstration, the proposed filtering LNA has been implemented. The operating band was measured at 12–18 GHz with an NF of 1.5–1.9 dB and a gain of 20.6 ± 1.1 dB. High rejection levels of 34 dBc @10 GHz and 64 dBc @8 GHz have been achieved. The proposed design has been compared with previously published papers, showing good LNA performance with high image rejection.

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References

  1. Ahn H B, Ji H G, Choi Y, et al. 25–31 GHz GaN-based LNA MMIC employing hybrid-matching topology for 5G base station applications. IEEE Microw Wireless Tech Lett, 2023, 33: 47–50

    Article  Google Scholar 

  2. Resca D, Scappaviva F, Florian C, et al. A robust Ku-band low noise amplifier using an industrial 0.25-µm Al-GaN/GaN on SiC process. In: Proceedings of European Microwave Conference, Nuremberg, 2013. 1467–1470

  3. Guo F Q, Yao Z H. Design of a Ku-band AlGaN/GaN low noise amplifier. In: Proceedings of the 3rd Asia-Pacific Conference on Antennas and Propagation, Harbin, 2014. 1406–1408

  4. Gao L, Rebeiz G M. A 24–43 GHz LNA with 3.1–3.7 dB noise figure and embedded 3-pole elliptic high-pass response for 5G applications in 22 nm FDSOI. In: Proceedings of IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Boston, 2019. 239–242

  5. Li H Y, Xu J X, Gao L, et al. 24–35 GHz filtering LNA and filtering switch using compact mixed magnetic-electric coupling circuit in 28-nm bulk CMOS. IEEE Trans Circ Syst I, 2023, 70: 1071–1082

    Google Scholar 

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Acknowledgements

This work was supported in part by National Natural Science Foundation of China (Grant No. 62371193), Key Research and Development Program of Guangzhou (Grant No. 202103020002), and China Postdoctoral Science Foundation (Grant No. 2019M652894).

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Authors and Affiliations

  1. School of Electronic and Information Engineering, South China University of Technology, Guangzhou, 510641, China

    Huiyang Li & Xiuyin Zhang

  2. School of Microelectronics, South China University of Technology, Guangzhou, 511442, China

    Jinxu Xu

Authors
  1. Huiyang Li
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  2. Jinxu Xu
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  3. Xiuyin Zhang
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Correspondence to Jinxu Xu.

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Li, H., Xu, J. & Zhang, X. A Ku-band image-rejection filtering LNA MMIC in 150-nm GaN-on-SiC technology. Sci. China Inf. Sci. 67, 119404 (2024). https://doi.org/10.1007/s11432-023-3849-x

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  • DOI: https://doi.org/10.1007/s11432-023-3849-x

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