Abstract
The von Neumann bottleneck is a critical limitation in synaptic devices. Therefore, artificial synaptic devices resembling biological neuromorphic synapses have been developed to overcome the von Neumann bottleneck. However, synaptic devices require voltages, which results in considerable energy consumption. Here, photonic synaptic devices with the vertical structure of indium tin oxide (ITO)/SnO2/Al2O3/CsBi3I10/Au are fabricated, which can work in the self-powered mode owing to the photovoltaic effect endowed by a vertical multilayer structure. Several fundamental synaptic functions, such as excitatory postsynaptic current, paired-pulse facilitation, short-term plasticity (STP), long-term plasticity (LTP), pulse-frequency-dependent plasticity, transition of STP to LTP, and the learning experience are emulated. Moreover, Morse-coded external light information is decoded by self-powered photonic synaptic devices. The results indicate that self-powered photonic synaptic devices based on lead-free perovskites exhibit great potential for efficient neuromorphic computing and optical wireless communication.
References
Yu R, Li E, Wu X, et al. Electret-based organic synaptic transistor for neuromorphic computing. ACS Appl Mater Interface, 2020, 12: 15446–15455
Gong Y, Wang Y, Li R, et al. Tailoring synaptic plasticity in a perovskite QD-based asymmetric memristor. J Mater Chem C, 2020, 8: 2985–2992
Wang T Y, Meng J L, He Z, et al. Ultralow power wearable heterosynapse with photoelectric synergistic modulation. Adv Sci, 2020, 7: 1903480
Liu Y, Zhong J, Li E, et al. Self-powered artificial synapses actuated by triboelectric nanogenerator. Nano Energy, 2019, 60: 377–384
Wang W, Gao S, Wang Y, et al. Advances in emerging photonic memristive and memristive-like devices. Adv Sci, 2022, 9: 2105577
Zhang Y, Wang Z, Zhu J, et al. Brain-inspired computing with memristors: challenges in devices, circuits, and systems. Appl Phys Rev, 2020, 7: 011308
Mao H, Zhu Y, Zhu Y, et al. Amorphous indium-gallium-zinc-oxide memristor arrays for parallel true random number generators. Appl Phys Lett, 2023, 122: 053503
Li E, Lin W, Yan Y, et al. Synaptic transistor capable of accelerated learning induced by temperature-facilitated modulation of synaptic plasticity. ACS Appl Mater Interface, 2019, 11: 46008–46016
Wang Z, Joshi S, Savel’ev S E, et al. Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing. Nat Mater, 2017, 16: 101–108
Cao F, Tian W, Deng K, et al. Self-powered UV-Vis-NIR photodetector based on conjugated-polymer/CsPbBr3 nanowire array. Adv Funct Mater, 2019, 29: 1906756
Hu L, Zhao Q, Huang S, et al. Flexible and efficient perovskite quantum dot solar cells via hybrid interfacial architecture. Nat Commun, 2021, 12: 466
Dong Y, Wang Y K, Yuan F, et al. Bipolar-shell resurfacing for blue LEDs based on strongly confined perovskite quantum dots. Nat Nanotechnol, 2020, 15: 668–674
Zhang Z X, Li C, Lu Y, et al. Sensitive deep ultraviolet photodetector and image sensor composed of inorganic lead-free Cs3Cu2I5 perovskite with wide bandgap. J Phys Chem Lett, 2019, 10: 5343–5350
Wang Y, Lv Z, Chen J, et al. Photonic synapses based on inorganic perovskite quantum dots for neuromorphic computing. Adv Mater, 2018, 30: 1802883
Hao D D, Yang Z Y, Huang J, et al. Recent developments of optoelectronic synaptic devices based on metal halide perovskites. Adv Funct Mater, 2023, 33: 2211467
Kumar M, Abbas S, Lee J H, et al. Controllable digital resistive switching for artificial synapses and Pavlovian learning algorithm. Nanoscale, 2019, 11: 15596–15604
Li Y, Wang Y, Yin L, et al. Silicon-based inorganic-organic hybrid optoelectronic synaptic devices simulating cross-modal learning. Sci China Inf Sci, 2021, 64: 162401
Hao D, Liu D, Shen Y, et al. Air-stable self-powered photodetectors based on lead-free CsBi3I10/SnO2 heterojunction for weak light detection. Adv Funct Mater, 2021, 31: 2100773
Liu Z, Dai S, Wang Y, et al. Photoresponsive transistors based on lead-free perovskite and carbon nanotubes. Adv Funct Mater, 2020, 30: 1906335
Ji F, Huang Y, Wang F, et al. Near-infrared light-responsive Cu-doped Cs2 AgBiBr6. Adv Funct Mater, 2020, 30: 2005521
Yuan Y, Zhang L, Yan G, et al. Significantly enhanced detectivity of CIGS broadband high-speed photodetectors by grain size control and ALD-Al2O3 interfacial-layer modification. ACS Appl Mater Interface, 2019, 11: 20157–20166
Meng Y, Li F Z, Lan C Y, et al. Artificial visual systems enabled by quasi-two-dimensional electron gases in oxide superlattice nanowires. Sci Adv, 2020, 6: 6389
Park J S, Jeong J K, Chung H J, et al. Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water. Appl Phys Lett, 2008, 92: 072104
Jeong J K, Yang H W, Jeong J H, et al. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors. Appl Phys Lett, 2008, 93: 123508
Guo Z, Liu J, Han X, et al. High-performance artificial synapse based on CVD-grown WSe2 flakes with intrinsic defects. ACS Appl Mater Interface, 2023, 15: 19152–19162
Hao D, Zhang J, Dai S, et al. Perovskite/organic semiconductor-based photonic synaptic transistor for artificial visual system. ACS Appl Mater Interface, 2020, 12: 39487–39495
Yang Y, Lisberger S G. Purkinje-cell plasticity and cerebellar motor learning are graded by complex-spike duration. Nature, 2014, 510: 529–532
Huang W, Hang P, Wang Y, et al. Zero-power optoelectronic synaptic devices. Nano Energy, 2020, 73: 104790
Dai S, Wu X, Liu D, et al. Light-stimulated synaptic devices utilizing interfacial effect of organic field-effect transistors. ACS Appl Mater Interface, 2018, 10: 21472–21480
Sun Y, Qian L, Xie D, et al. Photoelectric synaptic plasticity realized by 2D perovskite. Adv Funct Mater, 2019, 29: 1902538
Ahmed T, Kuriakose S, Mayes E L H, et al. Optically stimulated artificial synapse based on layered black phosphorus. Small, 2019, 15: 1900966
Ma F, Zhu Y, Xu Z, et al. Optoelectronic perovskite synapses for neuromorphic computing. Adv Funct Mater, 2020, 30: 1908901
Wang T Y, Meng J L, He Z Y, et al. Fully transparent, flexible and waterproof synapses with pattern recognition in organic environments. Nanoscale Horiz, 2019, 4: 1293–1301
Yu F, Cai J C, Zhu L Q, et al. Artificial tactile perceptual neuron with nociceptive and pressure decoding abilities. ACS Appl Mater Interface, 2020, 12: 26258–26266
Acknowledgements
This work was supported by National Key Research and Development Program of China (Grant Nos. 2021YFA1101303, 2019YFE0121800), Science & Technology Foundation of Shanghai (Grant No. 20JC1415600), National Natural Science Foundation of China (Grant Nos. 62074111, 62088101), Innovation Program of Shanghai Municipal Education Commission (Grant No. 2021-01-07-00-07-E00096), Shanghai Municipal Science and Technology Major Project (Grant No. 2021SHZDZX0100), and Natural Science Foundation of Shandong Province (Grant Nos. ZR2022QB009, ZR2022MF246).
Author information
Authors and Affiliations
Corresponding authors
Additional information
Supporting information Figures S1–S11, Table S1. The supporting information is available online at info.scichina.com and link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.
Rights and permissions
About this article
Cite this article
Hao, D., Yang, D., Liang, H. et al. Lead-free perovskites-based photonic synaptic devices with zero electric energy consumption. Sci. China Inf. Sci. 67, 162401 (2024). https://doi.org/10.1007/s11432-023-3835-4
Received:
Revised:
Accepted:
Published:
DOI: https://doi.org/10.1007/s11432-023-3835-4