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Gate regulated near-infrared photodetector utilizing interlayer excitons for MoS2/CrPS4 heterojunction

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Conclusion

We have demonstrated a highly efficient visible-NIR photodetector based on the interlayer optical transition. Indirect interlayer transitions can occur proved by DFT calculations. In particular, the exciton current is tuned by an external gate field and the cutoff wavelength is increased to 1500 nm. Remarkably, there is a peak of about 2.75 nA at Vg = 5 V around 1075 nm wavelength. Finally, this study on utilizing interlayer excitons for spatially separated electrons and holes in different layers is expected to offer a novel binary and ternary heterojunction device to overcome the limitation of the intrinsic band for high-performance NIR photodetectors.

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Acknowledgements

This work was financially supported by National Natural Science Foundation of China (Grant Nos. 51972006, 12074096), Science and Technology Project of Hebei Education Department (Grant No. QN2022149), and Hebei Province Natural Science Foundation of China (Grant No. A2021208013).

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Author notes

  1. Xu G L and He C have the same contribution to this work.

Authors and Affiliations

  1. Hebei Provincial Key Laboratory of Photoelectric Control on Surface and Interface, College of Science, Hebei University of Science and Technology, Shijiazhuang, 050018, China

    Guoliang Xu, Chao He, Donghong Shi & Xingtao An

  2. Key Laboratory of Advanced Functional Materials, Ministry of Education, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China

    Danmin Liu & Wenjie Deng

  3. Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China

    Jingzhen Li & Yongzhe Zhang

Authors
  1. Guoliang Xu
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  2. Chao He
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  3. Donghong Shi
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  4. Danmin Liu
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  5. Wenjie Deng
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  6. Jingzhen Li
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  7. Xingtao An
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  8. Yongzhe Zhang
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Corresponding authors

Correspondence to Danmin Liu, Xingtao An or Yongzhe Zhang.

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Supporting information Appendix A. The supporting information is available online at info.scichina.com and link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.

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Xu, G., He, C., Shi, D. et al. Gate regulated near-infrared photodetector utilizing interlayer excitons for MoS2/CrPS4 heterojunction. Sci. China Inf. Sci. 67, 139401 (2024). https://doi.org/10.1007/s11432-023-3811-8

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  • DOI: https://doi.org/10.1007/s11432-023-3811-8

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