Abstract
Hafnium oxide-based ferroelectric field-effect-transistors (FeFET), which combine super-steep logical switching and low power non-volatile memory functions, have significant potential for post-Moore integrated circuit innovations with higher energy efficiency and larger integration scale. In this review, recent research into hafnium oxide-based ferroelectric (FE) films and different functional devices is presented, from fundamentals to applications. Different technological challenges and state-of-the-art research and development efforts related to the physical understanding and performance optimization of FE films, advanced hafnium oxide-based device integration, and device applications in logic-in-memory and artificial synapses and neurons for neuromorphic computing are addressed.
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This work was supported by National Natural Science Foundation of China (Grant Nos. 92064003, 91964202).
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Zhang, Z., Tian, G., Huo, J. et al. Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications. Sci. China Inf. Sci. 66, 200405 (2023). https://doi.org/10.1007/s11432-023-3780-7
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DOI: https://doi.org/10.1007/s11432-023-3780-7