Abstract
Various steep-slope devices based on novel structures and mechanisms garnered considerable attention for their potential in ultra-low power logic applications. In this work, a novel steep-slope negative quantum capacitance field-effect transistor (NQCFET) with molybdenum disulfide (MoS2)-integrated gate stack was realized by theoretical analysis and experimental evaluation. By combining the MoS2 equivalent capacitance model calibrated with experimental results, the NQCFET device model is further established. The results demonstrated that the optimized MoS2-integrated NQCFET can achieve a subthreshold swing (SS) of sub-60 mV/dec over a current range of 5 decades, with the minimum SS reaching 29 mV/dec, indicating the remarkable potential of MoS2-integrated NQCFETs for ultra-low power applications.
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Acknowledgements
This work was supported by National Key R&D Program of China (Grant No. 2018YFB2202801), National Natural Science Foundation of China (Grant No. 61927901), Beijing SAMT Project (Grant No. SAMT-BD-KT-22030101), 111 Project (Grant No. B18001), and Tencent Foundation through the Xplore Prize.
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Chen, L., Wang, H., Huang, Q. et al. A novel negative quantum capacitance field-effect transistor with molybdenum disulfide integrated gate stack and steep subthreshold swing for ultra-low power applications. Sci. China Inf. Sci. 66, 160406 (2023). https://doi.org/10.1007/s11432-023-3763-3
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DOI: https://doi.org/10.1007/s11432-023-3763-3