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From lab to fab: path forward for 2D material electronics

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Abstract

The increasing demand for computation requires the development of energy-efficient logic devices with reduced dimensions. Owing to their atomic thickness, 2D semiconductors are expected to provide possible solutions at the sub-1 nm technology node. Furthermore, taking advantage of the van der Waals nature, the low-temperature back-end of line integration with silicon may occur in the near future. In this perspective, vital progress in material synthesis, device engineering, and integration technologies toward integrated circuits based on 2D materials is reviewed. The challenges and important milestones on the roadmap for the next decade toward the fab adoption of 2D materials are outlined. Particularly, performance, power, area, cost, and equipment for further technology development in this area are proposed as key metrics and enablers.

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Acknowledgements

This work was supported by National Key R&D Program of China (Grant Nos. 2022YFB4400100, 2020YFA0309600), National Natural Science Foundation of China (Grant Nos. T2221003, 61927808, 61734003, 61851401, 91964202, 62204124, 62204113, 12104330, 51861145202), Leading-Edge Technology Program of Jiangsu Natural Science Foundation (Grant No. BK20202005), Natural Science Foundation of Jiangsu Province (Grant No. BK20220773), Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB30000000), Fundamental Research Funds for the Central Universities, China (Grant No. 2023300247), Key-Area Research and Development Program of Guangdong Province (Grant No. 2020B0101340001), Key Laboratory of Advanced Photonic and Electronic Materials, and Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics.

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Authors and Affiliations

  1. National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China

    Hongkai Ning, Taotao Li, Yi Shi & Xinran Wang

  2. School of Integrated Circuits, Nanjing University, Suzhou, 215163, China

    Zhihao Yu & Xinran Wang

  3. College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China

    Zhihao Yu

  4. Suzhou Laboratory, Suzhou, 215004, China

    Haoliang Shen, Gen Long & Xinran Wang

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  1. Hongkai Ning
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  2. Zhihao Yu
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  6. Yi Shi
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Correspondence to Zhihao Yu or Xinran Wang.

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Ning, H., Yu, Z., Li, T. et al. From lab to fab: path forward for 2D material electronics. Sci. China Inf. Sci. 66, 160411 (2023). https://doi.org/10.1007/s11432-023-3752-3

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