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Recent progress of layered memristors based on two-dimensional MoS2

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Abstract

Memristors are memory-capable electronic components that consist of two terminals and a switching layer, whose resistance can be adjusted by an applied bias voltage. Two-dimensional (2D) materials with ultrathin layered structures are used as switching layers to overcome the limitations of traditional resistive materials in reducing the memristor sizes, demonstrating their potential in memory, flexible electronics, neuromorphic computing, and other related fields. Particularly, MoS2 is widely used as a representative 2D semiconductor, and the MoS2-based memristors have been intensively studied. In this review article, we have summarized the recent progress of MoS2-based memristors, including the fabrication process, device structure, device performance, switching mechanism, and synaptic applications. In addition, we also discussed the prospects and challenges for their future development.

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Acknowledgements

This work was supported by National Key R&D Program of China (Grant No. 2021YFA1200503) and National Natural Science Foundation of China (Grant Nos. 51991340, 51991341, 52221001, U22A2074).

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Authors and Affiliations

  1. Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China

    Wei Tong & Yuan Liu

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  1. Wei Tong
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  2. Yuan Liu
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Correspondence to Yuan Liu.

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Tong, W., Liu, Y. Recent progress of layered memristors based on two-dimensional MoS2. Sci. China Inf. Sci. 66, 160402 (2023). https://doi.org/10.1007/s11432-023-3751-y

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