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Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K

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References

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Acknowledgements

This work was supported by National Key Research and Development Project (Grant No. 2018YFB2200500), National Natural Science Foundation of China (Grant Nos. 62025402, 62090033, 91964202), Major Scientific Research Project of Zhejiang Lab (Grant No. 2021MD0AC01), and Zhejiang Province Key R&D Programs (Grant Nos. 2022C01232, 2021C05004).

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Authors and Affiliations

  1. Research Center for Intelligent Chips, Zhejiang Lab, Hangzhou, 311121, China

    Huan Liu, Chengji Jin, Jiajia Chen, Xiao Yu & Genquan Han

  2. School of Microelectronics, Xidian University, Xi’an, 710071, China

    Huan Liu, Qiyu Yang, Lulu Chou, Yan Liu & Genquan Han

Authors
  1. Huan Liu
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  2. Qiyu Yang
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  3. Chengji Jin
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  4. Jiajia Chen
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  5. Lulu Chou
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  6. Xiao Yu
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  7. Yan Liu
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  8. Genquan Han
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Corresponding authors

Correspondence to Xiao Yu or Yan Liu.

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Liu, H., Yang, Q., Jin, C. et al. Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K. Sci. China Inf. Sci. 67, 119401 (2024). https://doi.org/10.1007/s11432-022-3721-0

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  • DOI: https://doi.org/10.1007/s11432-022-3721-0

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