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High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation

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References

  1. Chowdhury N, Xie Q, Yuan M, et al. First demonstration of a self-aligned GaN p-FET. In: Proceedings of 2019 IEEE International Electron Devices Meeting Visions, San Francisco, 2019. 1–4

  2. Shibata D, Kajitani R, Ogawa M, et al. 1.7 kV/1.0 mΩ · cm2 normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure. In: Proceedings of 2016 IEEE International Electron Devices Meeting Visions, San Francisco, 2016. 1–4

  3. Lee H S, Piedra D, Sun M, et al. 3000-V 4.3-mΩ · cm2 InAlN/GaN MOSHEMTs with AlGaN back barrier. IEEE Electron Device Lett, 2012, 33: 982–984

    Article  Google Scholar 

  4. Tang C, Xie G, Sheng K. Study of the leakage current suppression for hybrid-Schottky/Ohmic drain AlGaN/GaN HEMT. Microelectron Reliability, 2015, 55: 347–351

    Article  Google Scholar 

  5. Zhang W, Fu L, Liu X, et al. In-situ-SiN/AlN/Al0.05Ga0.95N high electron-mobility transistors on Si-substrate using Al2O3/SiO2 passivation. IEEE J Electron Devices Soc, 2021, 9: 348–352

    Article  Google Scholar 

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Acknowledgements

This work was supported in part by National Key Research and Development Program of China (Grant No. 2021YFB3601900), Fundamental Research Plan (Grant No. JCKY2020110B010), Key-Area Research and Development Program of Guangdong Province (Grant No. 2020B010174001), National Science Fund for Distinguished Young Scholars (Grant No. 61925404), and Guangdong Basic and Applied Basic Research Foundation (Grant No. 2020A1515110316).

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Authors and Affiliations

  1. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, 710071, China

    Yutong Fan, Xi Liu, Ren Huang, Yu Wen, Weihang Zhang, Jincheng Zhang, Zhihong Liu & Shenglei Zhao

  2. Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou, 510555, China

    Yutong Fan, Weihang Zhang, Jincheng Zhang & Zhihong Liu

Authors
  1. Yutong Fan
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  2. Xi Liu
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  3. Ren Huang
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  4. Yu Wen
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  5. Weihang Zhang
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  6. Jincheng Zhang
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  7. Zhihong Liu
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  8. Shenglei Zhao
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Correspondence to Weihang Zhang or Jincheng Zhang.

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Fan, Y., Liu, X., Huang, R. et al. High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation. Sci. China Inf. Sci. 66, 229404 (2023). https://doi.org/10.1007/s11432-022-3707-2

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  • DOI: https://doi.org/10.1007/s11432-022-3707-2

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