Abstract
High-speed optoelectronic devices are key components of modern fiber communication systems, and the backbone of information technology. In this paper, we present our work on high-speed devices over the past decades, including high-performance semiconductor lasers and integrated light sources, wideband electro-optic modulators, high saturation power photodetectors, and their applications in both fiber communications and microwave photonics. Gain-coupled distributed feedback (DFB) lasers were fabricated with high single-mode yield. Electroabsorption modulated lasers (EMLs) were demonstrated based on identical epitaxial layer integration scheme, including single channel 40 Gb/s EMLs, and 4 × 25 and 4 × 56 Gb/s EML arrays. Both InP and thin-film lithium niobate based low half-wave voltage electro-optic modulators with modulation bandwidth over 40 GHz were demonstrated. Back-illuminated modified uni-traveling-carrier photodetectors (MUTC-PDs) with high saturation power and bandwidth exceeding 100 GHz were developed. Applications of high-speed optoelectronic devices in fiber-optic links and sub-THz wave generation are presented.
Similar content being viewed by others
References
Kogelnik H, Shank C V. Coupled-wave theory of distributed feedback lasers. J Appl Phys, 1972, 43: 2327–2335
Agrawal G P, Dutta N K. Semiconductor Lasers. 2nd ed. New York: Van Nostrand Reinhold, 1993
Haus H A, Shank C V. Antisymmetric taper of distributed feedback lasers. IEEE J Quantum Electron, 1976, 12: 532–539
Utaka K, Akiba S, Sakai K, et al. Analysis of quarter-wave-shifted DFB laser. Electron Lett, 1984, 20: 326–327
Soda H, Kotaki Y, Sudo H, et al. Stability in single longitudinal mode operation in GaInAsP/InP phase-adjusted DFB lasers. IEEE J Quantum Electron, 1987, 23: 804–814
Kapon E, Katzir A, Hardy A. The effect of complex coupling coefficients on distributed feedback lasers. IEEE J Quantum Electron, 1982, 18: 66–71
Luo Y, Nakano Y, Tada K. Fabrication and characteristics of a gain-coupled distributed-feedback laser diode. In: Proceedings of Extended Abstract of International Conference on Solid State Devices and Materials, Tokyo, 1988, 327–330
Luo Y, Inoue T, Hosomatsu H, et al. Fabrication and characteristics of gain-coupled distributed feedback semiconductor lasers with a corrugated active layer. IEEE J Quantum Electron, 1991, 27: 1724–1731
Luo Y, Si W M, Zhang S Z, et al. Fabrication of GaAlAs/GaAs gain-coupled distributed feedback lasers using the nature of MBE. IEEE Photon Technol Lett, 1994, 6: 17–20
Cai P F, Sun C Z, Xiong B, et al. High-speed direct modulated 1.5 µm uncooled AlGaInAs-InP MQW DFB lasers (in Chinese). J Optoelectron Laser, 2007, 18: 666–668
Coldren L A, Corzine S W, Masnovic M L. Diode Lasers and Photonic Integrated Circuits. 2nd ed. Hoboken: John Wiley & Sons, 2012
Shimizu J, Aoki M, Tsuchiya T, et al. Advantages of optical modulators with InGaAlSa/InGaAlAs MQW structure. Electron Lett, 2002, 38: 821–822
Luo Y, Wen G P, Sun C Z, et al. 2.5 Gb/s electroabsorption modulator integrated with partially gain-coupled distributed feedback laser fabricated using a very simple device structure. Jpn J Appl Phys, 1999, 38: L524–L526
Luo Y, Xiong B, Wang J, et al. 40 GHz AlGaInAs multiple-quantum-well integrated electroabsorption modulator/distributed feedback laser based on identical epitaxial layer scheme. Jpn J Appl Phys, 2006, 45: L1071–L1073
Cai P F, Sun C Z, Xiong B, et al. 40 Gb/s AlGaInAs electroabsorption modulated laser module based on identical epitaxial layer scheme. Jpn J Appl Phys, 2007, 46: 664–666
Sun C Z, Xiong B, Wen G P, et al. Influence of wavelength detuning on device performance of electroabsorption modulalor integrated distributed feedback lasers based on identical epitaxial layer approach. IEICE Trans Electron, 2001, E84-C: 656–659
Sun C, Xiong B, Wang J, et al. Fabrication and packaging of 40-Gb/s AlGaInAs multiple-quantum-well electroabsorption modulated lasers based on identical epitaxial layer scheme. J Lightwave Technol, 2008, 26: 1464–1471
Sun C Z, Xiong B, Wang J, et al. Influence of residual facet reflection on the eye-diagram performance of high-speed electroabsorption modulated lasers. J Lightwave Technol, 2009, 27: 2970–2976
Yang S, Sun C, Xiong B, et al. Gain-coupled 4 × 25 Gb/s EML array based on an identical epitaxial layer integration scheme. IEEE J Sel Top Quantum Electron, 2019, 25: 1–6
Yang S, Sun C, Xiong B, et al. Gain-coupled 4 × 56 Gb/s EML array with optimized bonding-wire inductance. IEEE J Sel Top Quantum Electron, 2022, 28: 1–7
Zhao X, Xiong B, Sun C, et al. Low drive voltage optical phase modulator with novel InGaAlAs/InAlAs multiple-quantum-barrier based n-i-n heterostructure. Opt Express, 2013, 21: 24894–24903
Tsuzuki K, Ishibashi T, Ito T, et al. 40 Gbit/s n-i-n InP Mach-Zehnder modulator with a voltage of 2.2 V. Electron Lett, 2003, 39: 1464–1465
Kikuchi N, Shibata Y, Tsuzuki K, et al. 80-Gb/s low-driving-voltage InP DQPSK modulator with an n-p-i-n structure. IEEE Photon Technol Lett, 2009, 21: 787–789
Xing J, Sun C, Xiong B, et al. 40 GHz and 1.1-V Vπ InP-based n-i-n EO modulator. In: Proceedings of Conference on Lasers and Electro-Optics (CLEO 2022), San Jose, 2022
Wang C, Zhang M, Chen X, et al. Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages. Nature, 2008, 562: 101–104
Liu X, Xiong B, Sun C, et al. Low half-wave-voltage thin film LiNbO3 electro-optic modulator based on a compact electrode structure. In: Proceedings of Asia Communications and Photonics Conference (ACP/IPOC 2020), Beijing, 2020
Kharel P, Reimer C, Luke K, et al. Breaking voltage-bandwidth limits in integrated lithium niobate modulators using micro-structured electrodes. Optica, 2021, 8: 357–363
Liu X, Xiong B, Sun C, et al. Wideband thin-film lithium niobate modulator with low half-wave-voltage length product. Chin Opt Lett, 2021, 19: 060016
Hu J, Li C, Guo C, et al. Folded thin-film lithium niobate modulator based on a poled Mach-Zehnder interferometer structure. Opt Lett, 2021, 46: 2940–2943
Sun S, Xu M, He M, et al. Folded heterogeneous silicon and lithium niobate Mach-Zehnder modulators with low drive voltage. Micromachines, 2021, 12: 823
Liu X, Liu H, Xiong B, et al. Broadband meandered thin-film lithium niobate modulator with ultra-low half-wave voltage. IEEE Photon Technol Lett, 2022, 34: 424–427
Charles H CIII. Analog Optical Links. Cambridge: Cambridge University Press, 2004
Li J, Xiong B, Sun C, et al. Analysis of frequency response of high power MUTC photodiodes based on photocurrent-dependent equivalent circuit model. Opt Express, 2015, 23: 21615–21623
Li J, Xiong B, Luo Y, et al. Ultrafast dual-drifting layer uni-traveling carrier photodiode with high saturation current. Opt Express, 2016, 24: 8420–8428
Chao E, Xiong B, Sun C, et al. D-band MUTC photodiodes with flat frequency response. IEEE J Sel Top Quantum Electron, 2022, 28: 1–8
Weng H Z, Wada O, Han J Y, et al. Sub-THz wave generation based on a dual wavelength microsquare laser. Electron lett, 2017, 53: 939–941
Shi T, Xiong B, Sun C, et al. Applications of high-saturation-current photodiode in the ROF links with low noise figure and high gain (in Chinese). J Optoelectron Laser, 2013, 24: 56–62
Tonouchi M. Cutting-edge terahertz technology. Nat Photon, 2007, 1: 97–105
Selected publications
Luo Y, Nakano Y, Tada K. Purely gain-coupled distributed feedback semiconductor lasers. Appl Phys Lett, 1990: 1620–1622
Luo Y, Takahashi R, Nakano Y, et al. Ultralow chirping short optical pulse (16ps) generation in gain-coupled distributed feedback semiconductor lasers. Appl Phys Lett, 1991, 59: 37–39
Luo Y, Cao H L, Dobashi M, et al. Gain-coupled distributed feedback semiconductor lasers with an absorptive conduction-type inverted grating. IEEE Photon Technol Lett, 1992, 4: 692–695
Luo Y, Si W M, Zhang S Z, et al. Fabrication of GaAlAs/GaAs gain-coupled distributed feedback lasers using the nature of MBE. IEEE Photon Technol Lett, 1994, 6: 17–20
Luo Y, Sun C Z, Nakano Y, et al. Analysis of gain and index coupling coefficients of DFB semiconductor lasers using a practical model. Int J Optoelectron, 1995, 10: 331–335
Luo Y, Wen G P, Sun C Z, et al. 2.5 Gb/s electroabsorption modulator integrated with partially gain-coupled distributed feedback laser fabricated using a very simple device structure (in Chinese). Jpn J Appl Phys 2, 1999, 38: L524
Luo Y, Guo W P, Shao J P, et al. A study on wavelength stability of gan-based blue light emitting diodes. Acta Phys Sin, 2004, 53: 2720–2723
Luo Y, Xiong B, Wang J, et al. 40 GHz AlGaInAs multiple-quantum-well integrated electroabsorption modulator/distributed feedback laser based on identical epitaxial layer scheme. Jpn J Appl Phys 2, 2006, 45: L1071
Luo Y, Feng Z X, Han Y J, et al. Design of compact and smooth free-form optical system with uniform illuminance for LED source. Opt Express, 2010, 18: 9055–9063
Li J, Xiong B, Sun C Z, et al. Analysis of frequency response of high power MUTC photodiodes based on photocurrent-dependent equivalent circuit model. Opt Express, 2015, 23: 21615–21623
Liu X C, Xiong B, Sun C Z, et al. Low half-wave-voltage thin film LiNbO3 electro-optic modulator based on a compact electrode structure. In: Proceedings of Asia Communications and Photonics Conference (ACP/IPOC 2020), Beijing, 2020. M4A.144
Liu X, Xiong B, Sun C Z, et al. Broadband meandered thin-film lithium niobate modulator with ultra-low half-wave voltage. IEEE Photon Technol Lett, 2022, 34: 424–427
Chao E, Xiong B, Sun C Z, et al. D-band MUTC photodiodes with flat frequency response. IEEE J Sel Top Quantum Electron, 2022, 28: 3802208
Acknowledgements
This work was supported in part by National Key R&D Program of China (Grant No. 2018YFB2201701), National Natural Science Foundation of China (Grant Nos. 62235005, 62127814, 61975093, 61927811, 61991443, 61822404, 61974080, 61904093, 61875104), Key Lab Program of BNRist (Grant No. BNR2019ZS01005), China Postdoctoral Science Foundation (Grant No. 2019T120090), and Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics.
Author information
Authors and Affiliations
Corresponding author
Additional information
Profile of Yi LUO
Prof. Yi Luo received his B.S. degree from Tsinghua University in 1983, and his M.S. and Ph.D. degrees from the University of Tokyo in 1987 and 1990, respectively. He is a professor of the Department of Electronic Engineering at Tsinghua University and deputy director of the Beijing National Research Center for Information Science and Technology. Prof. Luo is an OSA Fellow for contributions to compound semiconductor optoelectronic devices and was elected as a member of the Chinese Academy of Engineering (CAE) in 2021. He has been granted several government and society awards, including the National Science Foundation for Distinguished Young Scholars of China in 1995, and Changjiang distinguished professor of the Ministry of Education of China in 1999. As the leader, he won the support of the Foundation for Innovative Research Groups of the National Science Foundation of China in 2013.
Prof. Yi Luo is mainly engaged in the research of compound semiconductor optoelectronic devices and their applications and has made pioneering contributions and outstanding achievements in high-speed optoelectronic devices including dynamic single-mode semiconductor lasers, as well as high-efficiency solid-state lighting technologies including GaN-based LEDs and three-dimensional (3D) free-form optical surface lenses.
Single-mode laser diodes are indispensable for optical fiber communications, their theory was published in 1972, but had not been completely realized for a long time. In the year of 1988, Luo proposed new grating structures including periodic changes of loss and gain materials along with semiconductor laser cavities, then realized the first gain-coupled distributed feedback (DFB) laser diode, demonstrating its excellent dynamic single-mode characteristics.
To transmit microwave signals on fiber, optoelectronic devices should be working with both enough bandwidth and dynamic range, but generally, there is a contradiction between them. Luo and his colleagues proposed a novel physical model, in which the carrier transit time, RC time constants and bandwidths were found to be strongly related to device bias voltages and large photocurrents. Based on this model, Luo has realized wide-bandwidth optical modulators with a bandwidth > 40 GHz and a dynamic extinction ratio > 10 dB, and photodiodes with a high saturation current > 28 mA at a bandwidth of 106 GHz, both of which were among the best-reported results under comparable conditions.
To fabricate optoelectronic devices, dry etching with a smooth etching surface, lower damage, and non-selective etching rate for hetero-structures comprised of different materials is necessary. However, they are very difficult to achieve simultaneously. Prof. Luo optimizes the physical and chemical etching mechanisms in the emerging ICP etching and made the etched surface roughness to be less than an atomic layer for all GaAs, InP, and GaN-based hetero-structures for the first time.
To meet the general lighting requirements, the intrinsic Lambert light distribution of traditional packaged LEDs should be transformed by freeform optical surface lenses. However, in the traditional 3D free-form optical surface design, there exist large calculation errors, surface discontinuity, and difficulty in the practical fabrication process such as injection molding. Prof. Luo proposed a novel design method, which can be implemented easily and precisely in practical fabrication. Based on this method, 3D free-form optical surfaces have been constructed for many LEDs based lighting applications such as street lighting.
Prof. Luo has published more than 400 journal papers and 50 invited reports and has been authorized 70 items of Japanese, American, European, and Chinese invention patents. In 2012, 2014, and 2019, as the first winner, he won 3 items of the second-class National Technological Invention Award of China, and in 2011, as the second winner, he obtained the second-class National Science and Technology Progress Award of China.
Prof. Luo has made substantial service to the global optics and photonics community. For a long time, he served as the deputy director of the National Research Center of Beijing Information Science and Technology, the Technical Program Committee member of the European Conference on Optical Communications (ECOC) (2003.1-present) and IEEE international semiconductor laser conference (2009.1-present), the oversea editor of the Japanese Journal of Applied Physics (2004.4-present) and Applied Physics Express (2008.4-present), the associate editor of the IEEE Journal of Quantum Electronics (1996-1998) and IEEE/OSA Journal of Lightwave Technology (2007.1–2012.12).
Rights and permissions
About this article
Cite this article
Luo, Y., Sun, C., Xiong, B. et al. High-speed optoelectronic devices. Sci. China Inf. Sci. 66, 150401 (2023). https://doi.org/10.1007/s11432-022-3669-5
Received:
Revised:
Accepted:
Published:
DOI: https://doi.org/10.1007/s11432-022-3669-5