Conclusion
The defects and their thermo-evolution in the hetero-integrated GaN films on Si(100) substrate were thoroughly studied. The nano-cavity defects and residual H ions in the as-transferred GaN film evolved into larger size cavity defects due to the OR mechanism and MC mechanism, while the GaN lattice was recovered and the NBE emission of the post-annealed GaN film at low temperature reappeared. The results of PAS and RBS also confirmed the evolution of defects and the recovery of GaN lattice.
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Acknowledgements
This work was supported by National Key Research and Development Program of China (Grant No. 2021YFB3601900), National Natural Science Foundation of China (Grant Nos. 62174167, 62293520, 62293521), Shanghai Rising-Star Program (Grant No. 22QA1410700), Shanghai Basic Research Project (Grant No. 22JC1403300), and K. C. Wong Education Foundation (Grant No. GJTD-2019-11).
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Supporting information Appendixes A and B. The supporting information is available online at https://info.scichina.com and https://link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.
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Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology
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Shi, H., Yi, A., Ding, J. et al. Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology. Sci. China Inf. Sci. 66, 219403 (2023). https://doi.org/10.1007/s11432-022-3668-0
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DOI: https://doi.org/10.1007/s11432-022-3668-0