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Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology

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Conclusion

The defects and their thermo-evolution in the hetero-integrated GaN films on Si(100) substrate were thoroughly studied. The nano-cavity defects and residual H ions in the as-transferred GaN film evolved into larger size cavity defects due to the OR mechanism and MC mechanism, while the GaN lattice was recovered and the NBE emission of the post-annealed GaN film at low temperature reappeared. The results of PAS and RBS also confirmed the evolution of defects and the recovery of GaN lattice.

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References

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Acknowledgements

This work was supported by National Key Research and Development Program of China (Grant No. 2021YFB3601900), National Natural Science Foundation of China (Grant Nos. 62174167, 62293520, 62293521), Shanghai Rising-Star Program (Grant No. 22QA1410700), Shanghai Basic Research Project (Grant No. 22JC1403300), and K. C. Wong Education Foundation (Grant No. GJTD-2019-11).

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Authors and Affiliations

  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China

    Hangning Shi, Ailun Yi, Jiaxin Ding, Xudong Liu, Qingcheng Qin, Wenhui Xu, Kai Huang, Tiangui You & Xin Ou

  2. University of Chinese Academy of Sciences, Beijing, 100049, China

    Hangning Shi, Ailun Yi, Jiaxin Ding, Xudong Liu, Wenhui Xu, Kai Huang, Tiangui You & Xin Ou

  3. School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai, 200093, China

    Qingcheng Qin

  4. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China

    Juemin Yi, Junjie Hu, Miao Wang, Jianfeng Wang & Ke Xu

  5. Suzhou Nanowin Science and Technology Co., Ltd., Suzhou, 215123, China

    Demin Cai, Jianfeng Wang & Ke Xu

  6. SABers Co., Ltd., Tianjin, 300451, China

    Fengwen Mu

  7. Collaborative Research Center, Meisei University, Hino-shi, Tokyo, 191-8506, Japan

    Tadatomo Suga

  8. Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrße 400, Dresden, 01328, Germany

    René Heller, Mao Wang & Shengqiang Zhou

  9. College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu, 610101, China

    Mao Wang

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  1. Hangning Shi
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  2. Ailun Yi
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  12. Fengwen Mu
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  13. Tadatomo Suga
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  15. Mao Wang
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  16. Shengqiang Zhou
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  17. Wenhui Xu
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  18. Kai Huang
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  19. Tiangui You
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  20. Xin Ou
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Corresponding authors

Correspondence to Tiangui You or Xin Ou.

Additional information

Supporting information Appendixes A and B. The supporting information is available online at https://info.scichina.com and https://link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.

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Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology

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Shi, H., Yi, A., Ding, J. et al. Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology. Sci. China Inf. Sci. 66, 219403 (2023). https://doi.org/10.1007/s11432-022-3668-0

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  • DOI: https://doi.org/10.1007/s11432-022-3668-0

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