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Intrinsic variations of ultrathin hafnium oxide-based ferroelectric tunnel junctions induced by ferroelectric-dielectric phase fluctuations

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References

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Acknowledgements

This work was supported in part by National Natural Science Foundation of China (Grant No. 61804003), National Key R&D Program of China (Grant No. 2018YFA0209000), and Beijing Nova Program (Grant No. Z201100006820096).

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Authors and Affiliations

  1. Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Beijing, 100124, China

    Pengying Chang & Yiyang Xie

  2. School of Integrated Circuits, Peking University, Beijing, 100871, China

    Mengqi Fan, Gang Du & Xiaoyan Liu

Authors
  1. Pengying Chang
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  2. Mengqi Fan
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  3. Gang Du
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  4. Xiaoyan Liu
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  5. Yiyang Xie
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Corresponding authors

Correspondence to Xiaoyan Liu or Yiyang Xie.

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Supporting information

Appendixes A—G. The supporting information is available online at info.scichina.com and link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.

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Intrinsic variations of ultrathin hafnium oxide-based ferroelectric tunnel junctions induced by ferroelectric-dielectric phase fluctuations

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Chang, P., Fan, M., Du, G. et al. Intrinsic variations of ultrathin hafnium oxide-based ferroelectric tunnel junctions induced by ferroelectric-dielectric phase fluctuations. Sci. China Inf. Sci. 66, 209402 (2023). https://doi.org/10.1007/s11432-022-3655-x

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  • DOI: https://doi.org/10.1007/s11432-022-3655-x

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