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Modeling and physical mechanism analysis of the effect of a polycrystalline-ferroelectric gate on FE-FinFETs

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Acknowledgements

This work was supported in part by National Key Research and Development Program of China (Grant No. 2019YFB2205100) and Hubei Key Laboratory of Advanced Memories.

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Authors and Affiliations

  1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China

    Chengxu Wang, Hao Yu, Yichen Wang, Zichong Zhang, Xiangshui Miao & Xingsheng Wang

  2. Hubei Yangtze Memory Laboratories, Wuhan, 430205, China

    Xiangshui Miao & Xingsheng Wang

  3. School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, China

    Xiangshui Miao & Xingsheng Wang

  4. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China

    Xiangshui Miao & Xingsheng Wang

Authors
  1. Chengxu Wang
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  2. Hao Yu
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  3. Yichen Wang
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  4. Zichong Zhang
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  5. Xiangshui Miao
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  6. Xingsheng Wang
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Corresponding author

Correspondence to Xingsheng Wang.

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Appendix A. The supporting information is available online at info.scichina.com and link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.

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Wang, C., Yu, H., Wang, Y. et al. Modeling and physical mechanism analysis of the effect of a polycrystalline-ferroelectric gate on FE-FinFETs. Sci. China Inf. Sci. 66, 159403 (2023). https://doi.org/10.1007/s11432-022-3501-7

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  • DOI: https://doi.org/10.1007/s11432-022-3501-7

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