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Insights of VG-dependent threshold voltage fluctuations from dual-point random telegraph noise characterization in nanoscale transistors

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References

  1. Ji Z, Chen H, Li X. Design for reliability with the advanced integrated circuit (IC) technology: challenges and opportunities. Sci China Inf Sci, 2019, 62: 226401

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  2. Wang R, Guo S, Zhang Z, et al. Too noisy at the bottom?— Random telegraph noise (RTN) in advanced logic devices and circuits. In: Proceedings of 2018 IEEE International Electron Devices Meeting (IEDM). 2018. 1–4

  3. Franco J, Kaczer B, Toledano-Luque M, et al. Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs. In: Proceedings of IEEE International Reliability Physics Symposium (IRPS), 2012. 1–6

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Acknowledgements

This work was financially supported by China Key Research and Development Program (Grant Nos. 2016YFA0201802, 2019YFB2205005), National Natural Science Foundation of China (Grant Nos. 91964105, 61874068), Natural Science Foundation of Shandong (Grant Nos. ZR2020JQ28, ZR2020KF016, ZR2019LZH009), and Fundamental Research Funds of Shandong University.

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Authors and Affiliations

  1. School of Information Science and Engineering, Shandong University, Qingdao, 266200, China

    Xuepeng Zhan & Jiezhi Chen

  2. State Key Laboratory of High-end Server and Storage Technology, Jinan, 250100, China

    Xuepeng Zhan

  3. National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiaotong University, Shanghai, 200240, China

    Zhigang Ji

Authors
  1. Xuepeng Zhan
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  2. Jiezhi Chen
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  3. Zhigang Ji
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Corresponding authors

Correspondence to Jiezhi Chen or Zhigang Ji.

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Supporting information

Appendixes A—D. The supporting information is available online at info.scichina.com and link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.

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Insights of VG-dependent threshold voltage fluctuations from dual-point random telegraph noise characterization in nanoscale transistors

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Zhan, X., Chen, J. & Ji, Z. Insights of VG-dependent threshold voltage fluctuations from dual-point random telegraph noise characterization in nanoscale transistors. Sci. China Inf. Sci. 65, 189405 (2022). https://doi.org/10.1007/s11432-021-3330-8

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  • DOI: https://doi.org/10.1007/s11432-021-3330-8

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