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Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks

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This work was financially supported by National Key Project of Science and Technology of China (Grant Nos. 2017ZX02315001-002, 2019ZX02303).

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Correspondence to Huaxiang Yin or Wenwu Wang.

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Yang, H., Qi, L., Zhang, Y. et al. Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks. Sci. China Inf. Sci. 63, 129403 (2020). https://doi.org/10.1007/s11432-019-9875-2

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