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Complementary tunneling transistors based on WSe2/SnS2 van der Waals heterostructure

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References

  1. 1

    Manzeli S, Ovchinnikov D, Pasquier D, et al. 2D transition metal dichalcogenides. Nat Rev Mater, 2017, 2: 17033

  2. 2

    Lv Y W, Qin W J, Wang C L, et al. Recent advances in low-dimensional heterojunction-based tunnel field effect transistors. Adv Electron Mater, 2019, 5: 1800569

  3. 3

    Li X F, Gao T T, Wu Y Q. Development of two-dimensional materials for electronic applications. Sci China Inf Sci, 2016, 59: 061405

  4. 4

    Xie Q, Chen C, Liu M J, et al. Short-channel effects on the static noise margin of 6T SRAM composed of 2D semiconductor MOSFETs. Sci China Inf Sci, 2019, 62: 062404

  5. 5

    Wu P, Ameen T, Zhang H R, et al. Complementary black phosphorus tunneling field-effect transistors. ACS Nano, 2019, 13: 377–385

  6. 6

    Wu C L, Huang R, Huang Q Q, et al. Design guideline for complementary heterostructure tunnel FETs with steep slope and improved output behavior. IEEE Electron Dev Lett, 2016, 37: 20–23

  7. 7

    Schlaf R, Lang O, Pettenkofer C, et al. Band lineup of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: charge transfer correction term for the electron affinity rule. J Appl Phys, 1999, 85: 2732–2753

  8. 8

    Huang Y, Sutter E, Sadowski J T, et al. Tin disulfidean emerging layered metal dichalcogenide semiconductor: materials properties and device characteristics. ACS Nano, 2014, 8: 10743–10755

  9. 9

    Liu W, Kang J H, Cao W, et al. High-performance few-layer-MoS2 field-effect-transistor with record low contact-resistance. Int Electron Dev Meet, 2013, 13: 499–502

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Acknowledgements

This work was partly supported by National Natural Science Foundation of China (NSFC) (Grant Nos. 61851401, 61421005, 61822401), National Science and Technology Major Project (Grant No. 2017ZX-02315001-004), and 111 Project (Grant No. B18001).

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Correspondence to Qianqian Huang or Ru Huang.

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Jia, R., Chen, L., Huang, Q. et al. Complementary tunneling transistors based on WSe2/SnS2 van der Waals heterostructure. Sci. China Inf. Sci. 63, 149401 (2020). https://doi.org/10.1007/s11432-019-9872-x

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