Tunneling FET (TFET) is considered as one of the most promising low-power electronic devices, however, suffers from the low drive current. Heterostructure TFET with low effective tunnel barrier height based on traditional 3D materials can obtain large tunnel current but deteriorated off-state current induced by the lattice mismatch. van der Waals heterostructure TFET based on 2D materials can obtain dangling-bond-free interface for suppressed off-state current but face the challenge of controllable and stable doping technology. As the critical building block of the TFET, tunnel diode based on the 2D/3D heterostructure is proposed in this study and experimentally demonstrated. Combination of the pristine interface of 2D materials and matured doping technology in the traditional 3D bulk materials, tunnel diodes based on the 2D/3D heterostructures are expected to realize low leakage current and high on current simultaneously, showing great potential in low-power electronics. The N+ SnS2/P+ Si heterostructure with effective tunnel barrier of 0.17 eV theoretically is considered for the first time and selected as the optimal material platform for tunnel diodes. The N+ SnS2/P+ Si tunnel diode demonstrated experimentally shows the high current density of 1 µA/µm2, which is the highest one among the reported tunnel diodes based on the 2D/group IV materials. The tunneling current is also confirmed by low-temperature measurements. This study shows the great potential of the 2D/3D heterostructure for low-power tunneling devices.
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This work was partly supported by National Natural Science Foundation of China (Grant Nos. 61421005, 61851401, 61822401, 61604006) and the 111 Project (Grant No. B18001).
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Jia, R., Huang, Q. & Huang, R. Vertical SnS2/Si heterostructure for tunnel diodes. Sci. China Inf. Sci. 63, 122401 (2020). https://doi.org/10.1007/s11432-019-9836-9
- 2D/3D heterostructure
- tunnel barrier
- tunnel diode