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Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides

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Abstract

Two-dimensional layered materials (2DLMs) have triggered a broad research thrust over the last decade worldwide. Different from the gapless graphene, transition metal dichalcogenides (TMDs) exhibit versatile bandstructure, with bandgap sizes ranging from semi-metallic to over 2 eV. Therefore, 2D-TMDs can be utilized in various applications from logic to optoelectronic devices. In this review we first introduce the latest developments of the wafer-scale synthesis of continuous TMD films, then we present recent advances in large scale devices and circuits based on TMD films, including logic, memory, optoelectronic and analog devices. We also provide a perspective and a look at the future device applications based on wafer-scale 2D-TMDs.

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Acknowledgements

This work was supported by National Key Research and Development Program (Grant No. 2016-YFA0203900), Shanghai Municipal Science and Technology Commission (Grant No. 18JC1410300), and National Natural Science Foundation of China (Grant No. 61874154).

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Correspondence to Wenzhong Bao.

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Tang, H., Zhang, H., Chen, X. et al. Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides. Sci. China Inf. Sci. 62, 220401 (2019). https://doi.org/10.1007/s11432-019-2651-x

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Keywords

  • two-dimensional layered materials
  • transition metal dichalcogenides
  • field effect transistors
  • wafer-scale