A study on ionic gated MoS2 phototransistors

Abstract

Molybdenum disulfide (MoS2) holds great promise in the future applications of nanoelectronics and optoelectronic devices. Exploring those interesting physical properties of MoS2 using a strong electric field provided by electrolyte-gel is a robust approach. Here, we fabricate an MoS2 phototransistor gated by electrolyte-gel which is located on a fused silica substrate. Under the modulation of electrolyte-gel, the Schottky barrier between MoS2 and source/drain electrodes can be widely regulated from 11 to 179 meV. The MoS2 phototransistor exhibits excellent responsivity of 2.68 × 104 A/W and detectivity of 9.6 × 1010 Jones under visible incident light at negative gate voltage modulation. We attribute the optoelectronic performance enhancement to the Schottky barrier modulation of electrolyte-gel gating. It makes the device suitable for applications in high-sensitive photodetectors.

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Acknowledgements

This work was partially supported by Major State Basic Research Development Program (Grant Nos. 2016YFB0400801), National Natural Science Foundation of China (Grant Nos. 61722408, 61835012, 51802041), Key Research Project of Frontier Sciences of Chinese Academy of Sciences (Grant Nos. QYZDY-SSW-JSC042, QYZDB-SSW-JSC016), National Postdoctoral Program for Innovative Talents (Grant No. BX20180329), and Shanghai Sailing Program (Grant No. 19YF1454900).

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Correspondence to Wenzhong Bao or Jianlu Wang.

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Wu, B., Wang, X., Tang, H. et al. A study on ionic gated MoS2 phototransistors. Sci. China Inf. Sci. 62, 220405 (2019). https://doi.org/10.1007/s11432-019-1472-6

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Keywords

  • MoS2 phototransistor
  • electrolyte-gel gating
  • Schottky barrier
  • electric double layer
  • two-dimensional materials