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A study on ionic gated MoS2 phototransistors

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Molybdenum disulfide (MoS2) holds great promise in the future applications of nanoelectronics and optoelectronic devices. Exploring those interesting physical properties of MoS2 using a strong electric field provided by electrolyte-gel is a robust approach. Here, we fabricate an MoS2 phototransistor gated by electrolyte-gel which is located on a fused silica substrate. Under the modulation of electrolyte-gel, the Schottky barrier between MoS2 and source/drain electrodes can be widely regulated from 11 to 179 meV. The MoS2 phototransistor exhibits excellent responsivity of 2.68 × 104 A/W and detectivity of 9.6 × 1010 Jones under visible incident light at negative gate voltage modulation. We attribute the optoelectronic performance enhancement to the Schottky barrier modulation of electrolyte-gel gating. It makes the device suitable for applications in high-sensitive photodetectors.


  1. 1

    Wang X D, Liu C S, Chen Y, et al. Ferroelectric FET for nonvolatile memory application with two-dimensional MoSe2 channels. 2D Mater, 2017, 4: 025036

  2. 2

    Chen Y, Wang X D, Wang P, et al. Optoelectronic properties of few-layer MoS2 FET gated by ferroelectric relaxor polymer. ACS Appl Mater Interfaces, 2016, 8: 32083–32088

  3. 3

    Lan C Y, Zhou Z Y, Wei R J, et al. Two-dimensional perovskite materials: from synthesis to energy-related applications. Mater Today Energy, 2019, 11: 61–82

  4. 4

    Alarawi A, Ramalingam V, He J H. Recent advances in emerging single atom confined two-dimensional materials for water splitting applications. Mater Today Energy, 2019, 11: 1–23

  5. 5

    Ai Y, Hsu T H, Wu D C, et al. An ultrasensitive flexible pressure sensor for multimodal wearable electronic skins based on large-scale polystyrene ball@reduced graphene-oxide core-shell nanoparticles. J Mater Chem C, 2018, 6: 5514–5520

  6. 6

    Medina H, Li J G, Su T Y, et al. Wafer-scale growth of WSe2 monolayers toward phase-engineered hybrid WOx/WSe2 films with sub-ppb NOx gas sensing by a low-temperature plasma-assisted selenization process. Chem Mater, 2017, 29: 1587–1598

  7. 7

    Novoselov K S, McCann E, Morozov S V, et al. Unconventional quantum Hall effect and Berry’s phase of 2π in bilayer graphene. Nat Phys, 2006, 2: 177–180

  8. 8

    Schedin F, Geim A K, Morozov S V, et al. Detection of individual gas molecules adsorbed on graphene. Nat Mater, 2007, 6: 652–655

  9. 9

    Mak K F, Lee C, Hone J, et al. Atomically thin MoS2: a new direct-gap semiconductor. Phys Rev Lett, 2010, 105: 136805

  10. 10

    Naber R C G, Tanase C, Blom P W M, et al. High-performance solution-processed polymer ferroelectric field-effect transistors. Nat Mater, 2005, 4: 243–248

  11. 11

    Chang Y H, Zhang W J, Zhu Y H, et al. Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection. ACS Nano, 2014, 8: 8582–8590

  12. 12

    Tian B B, Liu L, Yan M G, et al. A robust artificial synapse based on organic ferroelectric polymer. Adv Electron Mater, 2019, 5: 1800600

  13. 13

    Wang J L, Hu W D. Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors. Chin Phys B, 2017, 26: 037106

  14. 14

    Wang X D, Chen Y, Wu G J, et al. Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating. npj 2D Mater Appl, 2017, 1: 38

  15. 15

    Lopez-Sanchez O, Lembke D, Kayci M, et al. Ultrasensitive photodetectors based on monolayer MoS2. Nat Nanotech, 2013, 8: 497–501

  16. 16

    Wang X D, Wang P, Wang J L, et al. Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics. Adv Mater, 2015, 27: 6575–6581

  17. 17

    Gao G Y, Wan B S, Liu X Q, et al. Tunable tribotronic dual-gate logic devices based on 2D MoS2 and black phosphorus. Adv Mater, 2018, 30: 1705088

  18. 18

    Park M, Park Y J, Chen X, et al. MoS2-based tactile sensor for electronic skin applications. Adv Mater, 2016, 28: 2556–2562

  19. 19

    Kim J S, Yoo H W, Choi H O, et al. Tunable volatile organic compounds sensor by using thiolated ligand conjugation on MoS2. Nano Lett, 2014, 14: 5941–5947

  20. 20

    Perkins F K, Friedman A L, Cobas E, et al. Chemical vapor sensing with monolayer MoS2. Nano Lett, 2013, 13: 668–673

  21. 21

    Jin K, Xie L M, Tian Y, et al. Au-modified monolayer MoS2 sensor for DNA detection. J Phys Chem C, 2016, 120: 11204–11209

  22. 22

    Gao N, Fang X S. Synthesis and development of graphene-inorganic semiconductor nanocomposites. Chem Rev, 2015, 115: 8294–8343

  23. 23

    Liu S X, Zheng L X, Yu P P, et al. Novel composites of α-Fe2O3 tetrakaidecahedron and graphene oxide as an effective photoelectrode with enhanced photocurrent performances. Adv Funct Mater, 2016, 26: 3331–3339

  24. 24

    Ouyang W X, Teng F, Fang X S. High performance BiOCl nanosheets/TiO2 nanotube arrays heterojunction UV photodetector: the influences of self-induced inner electric fields in the BiOCl nanosheets. Adv Funct Mater, 2018, 28: 1707178

  25. 25

    Tang S Y, Medina H, Yen Y T, et al. Enhanced photocarrier generation with selectable wavelengths by M-decorated-CuInS2 nanocrystals (M=Au and Pt) synthesized in a single surfactant process on MoS2 Bilayers. Small, 2019, 15: 1803529

  26. 26

    Yang W, Chen J X, Zhang Y, et al. Silicon-compatible photodetectors: trends to monolithically integrate photosensors with chip technology. Adv Funct Mater, 2019, 29: 1808182

  27. 27

    Kc S, Longo R C, Wallace R M, et al. Computational study of MoS2/HfO2 defective interfaces for nanometer-scale electronics. ACS Omega, 2017, 2: 2827–2834

  28. 28

    Song J G, Kim S J, Woo W J, et al. Effect of Al2O2 deposition on performance of top-gated monolayer MoS2-based field effect transistor. ACS Appl Mater Interfaces, 2016, 8: 28130–28135

  29. 29

    Yin C, Wang X D, Chen Y, et al. A ferroelectric relaxor polymer-enhanced p-type WSe2 transistor. Nanoscale, 2018, 10: 1727–1734

  30. 30

    Tu L Q, Wang X D, Wang J L, et al. Ferroelectric negative capacitance field effect transistor. Adv Electron Mater, 2018, 4: 1800231

  31. 31

    Wang J L, Fang H H, Wang X D, et al. Recent progress on localized field enhanced two-dimensional material photodetectors from ultraviolet-visible to infrared. Small, 2017, 13: 1700894

  32. 32

    Xue S, Zhao X L, Wang J L, et al. Preparation of La0.67Ca0.23Sr0.1MnO3 thin films with interesting electrical and magnetic properties via pulsed-laser deposition. Sci China Phys Mech Astron, 2017, 60: 027521

  33. 33

    Liu Y, Guo J, Zhu E B, et al. Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions. Nature, 2018, 557: 696–700

  34. 34

    Guo R, You L, Zhou Y, et al. Non-volatile memory based on the ferroelectric photovoltaic effect. Nat Commun, 2013, 4: 1990

  35. 35

    Wang J, Yao Q, Huang C W, et al. High mobility MoS2 transistor with low Schottky barrier contact by using atomic thick h-BN as a tunneling layer. Adv Mater, 2016, 28: 8302–8308

  36. 36

    Kappera R, Voiry D, Yalcin S E, et al. Phase-engineered low-resistance contacts for ultrathin MoS2 transistors. Nat Mater, 2014, 13: 1128–1134

  37. 37

    Osinsky A, Gangopadhyay S, Lim B W, et al. Schottky barrier photodetectors based on AlGaN. Appl Phys Lett, 1998, 72: 742–744

  38. 38

    Yang Y B, Huang L, Xiao Y, et al. Tunable polarity behavior and high-performance photosensitive characteristics in Schottky-barrier field-effect transistors based on multilayer WS2. ACS Appl Mater Interfaces, 2018, 10: 2745–2751

  39. 39

    Zhang Y J, Ye J T, Matsuhashi Y, et al. Ambipolar MoS2 thin flake transistors. Nano Lett, 2012, 12: 1136–1140

  40. 40

    Li H, Zhang Q, Yap C C R, et al. From bulk to monolayer MoS2: evolution of Raman scattering. Adv Funct Mater, 2012, 22: 1385–1390

  41. 41

    Das S R, Kwon J, Prakash A, et al. Low-frequency noise in MoSe2 field effect transistors. Appl Phys Lett, 2015, 106: 083507

  42. 42

    Chen Y, Wang X D, Wu G J, et al. High-performance photovoltaic detector based on MoTe2/MoS2 van der Waals heterostructure. Small, 2018, 14: 1703293

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This work was partially supported by Major State Basic Research Development Program (Grant Nos. 2016YFB0400801), National Natural Science Foundation of China (Grant Nos. 61722408, 61835012, 51802041), Key Research Project of Frontier Sciences of Chinese Academy of Sciences (Grant Nos. QYZDY-SSW-JSC042, QYZDB-SSW-JSC016), National Postdoctoral Program for Innovative Talents (Grant No. BX20180329), and Shanghai Sailing Program (Grant No. 19YF1454900).

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Correspondence to Wenzhong Bao or Jianlu Wang.

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Wu, B., Wang, X., Tang, H. et al. A study on ionic gated MoS2 phototransistors. Sci. China Inf. Sci. 62, 220405 (2019). https://doi.org/10.1007/s11432-019-1472-6

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  • MoS2 phototransistor
  • electrolyte-gel gating
  • Schottky barrier
  • electric double layer
  • two-dimensional materials