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This work was supported by National Natural Science Foundation of China (Grant Nos. 11875223, 11805155, 11690043), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDA15015000), the Innovation Foundation of Radiation Application (Grant No. KFZC2018040201), and the Foundation of State Key Laboratory of China (Grant No. SKLIPR1803, 1610).
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Wang, Z., Xue, Y., Chen, W. et al. Comparison of the dark signal degradation induced by Gamma ray, proton, and neutron radiation in pinned photodiode CMOS image sensors. Sci. China Inf. Sci. 62, 69403 (2019). https://doi.org/10.1007/s11432-018-9554-4