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A W-band wideband power amplifier using out-of-phase divider in 0.13-μm SiGe BiCMOS

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 61331006, 61601121), and Nature Science Foundation of Jiangsu Province (Grant No. BK20150638). The authors would like to thank the Milliway Microelectronics Corporation, Nanjing, China for providing the chip fabrication.

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Correspondence to Debin Hou.

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Hou, D., Hong, W., Chen, J. et al. A W-band wideband power amplifier using out-of-phase divider in 0.13-μm SiGe BiCMOS. Sci. China Inf. Sci. 61, 129401 (2018). https://doi.org/10.1007/s11432-017-9443-1

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