Integration of biocompatible organic resistive memory and photoresistor for wearable image sensing application

Abstract

The integration of multiple functional devices to achieve complex functions has become an essential requirement for future wearable biomedical electronic devices and systems. In this paper, we present a flexible multi-functional device composed of a biocompatible organic polymer resistive random-access memory (RRAM) and a photoresistor for wearable image sensing application. The resistive layer of organic polymer RRAM is composed by polychloro-para-xylylene (parylene-C), which is a flexible, transparent, biocompatibility and chemical stability polymer material. What is more, parylene-C is quite safe to be used within human body as it is a Food and Drug Administration (FDA)-approved material. This organic RRAM shows stable switching characteristics, low operation voltages (3.25 V for set voltage and −0.55 V for reset voltage), low static power consumption, high storage window and good retention properties (>104 s). A multi-functional device that can detect the light intensity of incident light and simultaneously store the information in the memory devices for wearable image sensing application was proposed and fabricated by integrating the organic resistive memory and a photoresistor. The threshold of incident light intensity can be easily adjust by changing the external voltage. This device is promising for building wearable electronic systems with various multiple functionalities.

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References

  1. 1

    Choi S, Lee H, Ghaffari R, et al. Recent advances in flexible and stretchable bio-electronic devices integrated with nanomaterials. Adv Mater, 2016, 28: 4203–4218

    Article  Google Scholar 

  2. 2

    Gao W, Emaminejad S, Nyein H Y Y, et al. Fully integrated wearable sensor arrays for multiplexed in situ perspiration analysis. Nature, 2016, 529: 509–514

    Article  Google Scholar 

  3. 3

    Pang C, Lee C, Suh K Y. Recent advances in flexible sensors for wearable and implantable devices. J Appl Polym Sci, 2013, 130: 1429–1441

    Article  Google Scholar 

  4. 4

    Shao Y Y, Wang J, Wu H, et al. Graphene based electrochemical sensors and biosensors: a review. Electroanalysis, 2010, 22: 1027–1036

    Article  Google Scholar 

  5. 5

    Kim S, Jeong H Y, Kim S K, et al. Flexible memristive memory array on plastic substrates. Nano Lett, 2011, 11: 5438–5442

    Article  Google Scholar 

  6. 6

    Kim J, Lee M S, Jeon S, et al. Highly transparent and stretchable field-effect transistor sensors using graphene-nanowire hybrid nanostructures. Adv Mater, 2015, 27: 3292–3297

    Article  Google Scholar 

  7. 7

    Wang X F, Lu X H, Liu B, et al. Flexible energy-storage devices: design consideration and recent progress. Adv Mater, 2014, 26: 4763–4782

    Article  Google Scholar 

  8. 8

    Trung T Q, Lee N E. Flexible and stretchable physical sensor integrated platforms for wearable human-activity monitoringand personal healthcare. Adv Mater, 2016, 28: 4338–4372

    Article  Google Scholar 

  9. 9

    Lee H, Choi T K, Lee Y B, et al. A graphene-based electrochemical device with thermoresponsive microneedles for diabetes monitoring and therapy. Nat Nanotech, 2016, 11: 566–572

    Article  Google Scholar 

  10. 10

    Son D, Lee J, Qiao S T, et al. Multifunctional wearable devices for diagnosis and therapy of movement disorders. Nat Nano, 2014, 9: 397–404

    Article  Google Scholar 

  11. 11

    Pan F, Gao S, Chen C, et al. Recent progress in resistive random access memories: materials, switching mechanisms, and performance. Mater Sci Eng R Rep, 2014, 83: 1–59

    Article  Google Scholar 

  12. 12

    Wong H S P, Lee H Y, Yu S M, et al. Metal-oxide RRAM. Proc IEEE, 2012, 100: 1951–1970

    Article  Google Scholar 

  13. 13

    Liu Q, Sun J, Lv H B, et al. Real-time observation on dynamic growth/dissolution of conductive filaments in oxideelectrolyte-based ReRAM. Adv Mater, 2012, 24: 1844–1849

    Article  Google Scholar 

  14. 14

    Yang Y C, Gao P, Gaba S, et al. Observation of conducting filament growth in nanoscale resistive memories. Nat Commun, 2012, 3: 732

    Article  Google Scholar 

  15. 15

    Yu M X, Cai Y M, Wang Z W, et al. Novel vertical 3D structure of TaOx-based RRAM with self-localized switching region by sidewall electrode oxidation. Sci Rep, 2016, 6: 21020

    Article  Google Scholar 

  16. 16

    Cheng C H, Yeh F S, Chin A. Low-power high-performance non-volatile memory on a flexible substrate with excellent endurance. Adv Mater, 2011, 23: 902–905

    Article  Google Scholar 

  17. 17

    Long S B, Liu Q, Lv H B, et al. Research progresses of resistive random access memory (in Chinese). Sci Sin-Phys Mech Astron, 2016, 46: 107311

    Google Scholar 

  18. 18

    Hudec B, Hsu C W, Wang I T, et al. 3D resistive RAM cell design for high-density storage class memory—a review. Sci China Inf Sci, 2016, 59: 061403

    Article  Google Scholar 

  19. 19

    Shin G H, Kim C K, Bang G S, et al. Multilevel resistive switching nonvolatile memory based on MoS2 nanosheetembedded graphene oxide. 2D Mater, 2016, 3: 034002

    Article  Google Scholar 

  20. 20

    Puglisi F M, Larcher L, Pan C, et al. 2D h-BN based RRAM devices. In: Proceedings IEEE International Electron Devices Meeting (IEDM), San Francisco, 2016

    Google Scholar 

  21. 21

    Casula G, Cosseddu P, Bonfiglio A. Integration of an organic resistive memory with a pressure-sensitive element on a fully flexible substrate. Adv Electron Mater, 2015, 1: 1500234

    Article  Google Scholar 

  22. 22

    Son D, Chae S I, Kim M, et al. Colloidal synthesis of uniform-sized molybdenum disulfide nanosheets for wafer-scale flexible nonvolatile memory. Adv Mater, 2016, 28: 9326–9332

    Article  Google Scholar 

  23. 23

    Choi J, Park S, Lee J, et al. Organolead halide perovskites for low operating voltage multilevel resistive switching. Adv Mater, 2016, 28: 6562–6567

    Article  Google Scholar 

  24. 24

    Wang C Y, Gu P Y, Hu B L, et al. Recent progress in organic resistance memory with small molecules and inorganicorganic hybrid polymers as active elements. J Mater Chem C, 2015, 3: 10055–10065

    Article  Google Scholar 

  25. 25

    Liu G, Zhuang X D, Chen Y, et al. Bistable electrical switching and electronic memory effect in a solution-processable graphene oxide-donor polymer complex. Appl Phys Lett, 2009, 95: 253301

    Article  Google Scholar 

  26. 26

    Nau S, Wolf C, Sax S, et al. Organic non-volatile resistive photo-switches for flexible image detector arrays. Adv Mater, 2015, 27: 1048–1052

    Article  Google Scholar 

  27. 27

    Pierre A, Gaikwad A, Arias A C. Charge-integrating organic heterojunction phototransistors for wide-dynamic-range image sensors. Nat Photon, 2017, 11: 193–199

    Article  Google Scholar 

  28. 28

    Yakunin S, Sytnyk M, Kriegner D, et al. Detection of X-ray photons by solution-processed lead halide perovskites. Nat Photon, 2015, 9: 444–449

    Article  Google Scholar 

  29. 29

    Tian L, Luo X L, Yin M, et al. Enhanced CMOS image sensor by flexible 3D nanocone anti-reflection film. Sci Bull, 2017, 62: 130–135

    Article  Google Scholar 

  30. 30

    Zhao Q, Huang C H, Li F Y. Phosphorescent heavy-metal complexes for bioimaging. Chem Soc Rev, 2011, 40: 2508–2524

    Article  Google Scholar 

  31. 31

    Fossum E R, Hondongwa D B. A review of the pinned photodiode for CCD and CMOS image sensors. IEEE J Electron Devices Soc, 2014, 2: 33–43

    Article  Google Scholar 

  32. 32

    Goossens S, Navickaite G, Monasterio C, et al. Broadband image sensor array based on graphene-CMOS integration. Nat Photon, 2017, 11: 366–371

    Article  Google Scholar 

  33. 33

    Theuwissen A J P. CMOS image sensors: state-of-the-art. Solid State Electron, 2008, 52: 1401–1406

    Article  Google Scholar 

  34. 34

    Huang W, Xu Z Y. Characteristics and performance of image sensor communication. IEEE Photon J, 2017, 9: 7902919

    Google Scholar 

  35. 35

    El-Desouki M, Deen M J, Fang Q Y, et al. CMOS image sensors for high speed applications. Sensors, 2009, 9: 430–444

    Article  Google Scholar 

  36. 36

    Shin B, Park S, Shin H. The effect of photodiode shape on charge transfer in CMOS image sensors. Solid-State Electron, 2010, 54: 1416–1420

    Article  Google Scholar 

  37. 37

    Zhou Y F, Cao Z X, Han Y, et al. A low power global shutter pixel with extended FD voltage swing range for large format high speed CMOS image sensor. Sci China Inf Sci, 2015, 58: 042406

    Google Scholar 

  38. 38

    Xue Y Y, Wang Z J, Liu M B, et al. Research on proton radiation effects on CMOS image sensors with experimental and particle transport simulation methods. Sci China Inf Sci, 2017, 60: 120402

    Article  Google Scholar 

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Acknowledgements

This work was supported in part by National Natural Science Foundation of China (Grant Nos. 61574007, 61376087, 61421005), Beijing Municipal Science and Technology Commission Program (Grant No. Z161100000216148), and Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences (Grant No. IIMDKFJJ-14-08).

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Correspondence to Yimao Cai.

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Chen, Q., Lin, M., Fang, Y. et al. Integration of biocompatible organic resistive memory and photoresistor for wearable image sensing application. Sci. China Inf. Sci. 61, 060411 (2018). https://doi.org/10.1007/s11432-017-9356-4

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Keywords

  • wearable device
  • image sensor
  • flexible
  • biocompatible
  • resistive random-access memory (RRAM)
  • photoresistor