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Flexible cation-based threshold selector for resistive switching memory integration

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Abstract

Emerging resistive switching random access memory (RRAM), considered as the most promising candidate of flash memory, is favorable for in flexible electronic system. However, in high density flexible crossbar RRAM array, crosstalk issue that currents from the neighboring unselected cell lead to failure of write and read operations, still keeps a main bottleneck. Therefore, flexible selector compatible with the flexibility of the RRAM array should be focused on to configure one selector-one resistor (1S1R) system, which is immune to crosstalk issue. In this paper, flexible cation-based threshold switching (TS) selectors (Pt/Ag/HfO2/Pt/Ti/parylene) are fabricated and the compressive performance is studied systematically. The device shows excellent bidirectional volatile TS characteristics, including high selectivity ratio (109), low operating voltages (|VTH|<1 V), ultra-low leakage current (~10−13 A) and good flexibility. The successful demonstration of the wire connected 1S1R unit comprising this flexible selector and one bipolar resistor cell indicates the great potential of this cation-based selector to restrain the crosstalk issue in a large flexible RRAM array.

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References

  1. 1

    Son D, Lee J, Qiao S T, et al. Multifunctional wearable devices for diagnosis and therapy of movement disorders. Nat Nanotech, 2014, 9: 397–404

  2. 2

    Jo A, Seo Y, Ko M, et al. Textile resistance switching memory for fabric electronics. Adv Funct Mater, 2017, 27: 1605593

  3. 3

    Choi S, Lee H, Ghaffari R, et al. Recent advances in flexible and stretchable bio-electronic devices integrated with nanomaterials. Adv Mater, 2016, 28: 4203–4218

  4. 4

    Zhu B W, Wang H, Leow W R, et al. Silk fibroin for flexible electronic devices. Adv Mater, 2016, 28: 4250–4265

  5. 5

    Shulaker M M, Hills G, Park R S, et al. Three-dimensional integration of nanotechnologies for computing and data storage on a single chip. Nature, 2017, 547: 74–78

  6. 6

    Kim G H, Ju H, Yang M K, et al. Four-bits-per-cell operation in an HfO2-based resistive switching device. Small, 2017, 13: 1701781

  7. 7

    Hou Y, Chen B, Chen Z, et al. Doping profile modification approach of the optimization of HfOx based resistive switching device by inserting AlOx layer. Sci China Inf Sci, 2015, 58: 062402

  8. 8

    Choi B J, Torrezan A C, Strachan J P, et al. High-speed and low-energy nitride memristors. Adv Funct Mater, 2016, 26: 5290–5296

  9. 9

    Luo Q, Xu X X, Liu H T, et al. Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays. Nanoscale, 2016, 8: 15629–15636

  10. 10

    Wang G M, Long S B, Zhang M Y, et al. Operation methods of resistive random access memory. Sci China Technol Sci, 2014, 57: 2295–2304

  11. 11

    Yang Y X, Yuan G L, Yan Z B, et al. Flexible, semitransparent, and inorganic resistive memory based on BaTi0.95Co0.05O3 film. Adv Mater, 2017, 29: 1700425

  12. 12

    Shang J, Xue W H, Ji Z H, et al. Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films. Nanoscale, 2017, 9: 7037–7046

  13. 13

    Yan X B, Zhou Z Y, Zhao J H, et al. Flexible memristors as electronic synapses for neuro-inspired computation based on scotch tape-exfoliated mica substrates. Nano Res, 2018, 11: 1183–1192

  14. 14

    Hudec B, Hsu C W, Wang I T, et al. 3D resistive RAM cell design for high-density storage class memory-a review. Sci China Inf Sci, 2016, 59: 061403

  15. 15

    Kim S, Son J H, Lee S H, et al. Flexible crossbar-structured resistive memory arrays on plastic substrates via inorganicbased laser lift-off. Adv Mater, 2014, 26: 7480–7487

  16. 16

    Yoo H G, Kim S, Lee K J. Flexible one diode-one resistor resistive switching memory arrays on plastic substrates. Rsc Adv, 2014, 4: 20017–20023

  17. 17

    Lo C L, Chen M C, Huang J J, et al. On the potential of CRS, 1D1R, and 1S1R crossbar RRAM for storage-class memory. In: Proceedings of IEEE Symposium on VLSI Technology, Hsinchu, 2013

  18. 18

    Luo Q, Xu X X, Lv H B, et al. Fully BEOL compatible TaOx-based selector with high uniformity and robust performance. In: Proceedings of IEEE International Electron Devices Meeting, San Francisco, 2016

  19. 19

    Choi B J, Zhang J, Norris K, et al. Trilayer tunnel selectors for memristor memory cells. Adv Mater, 2016, 28: 356–362

  20. 20

    Park J, Cha E, Karpov I, et al. Dynamics of electroforming and electrically driven insulator-metal transition in NbOx selector. Appl Phys Lett, 2016, 108: 232101

  21. 21

    Jo S H, Kumar T, Narayanan S, et al. Cross-point resistive RAM based on field-assisted superlinear threshold selector. IEEE Trans Electron Devices, 2015, 62: 3477–3481

  22. 22

    Bricalli A, Ambrosi E, Laudato M, et al. SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio. In: Proceedings of IEEE International Electron Devices Meeting, San Francisco, 2016

  23. 23

    Shukla N, Grisafe B, Ghosh R K, et al. Ag/HfO2 based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs. In: Proceedings of IEEE International Electron Devices Meeting, San Francisco, 2016

  24. 24

    Yoon J H, Zhang J M, Ren X C, et al. Truly electroforming-free and low-energy memristors with preconditioned conductive tunneling paths. Adv Funct Mater, 2017, 27: 1702010

  25. 25

    Midya R, Wang Z R, Zhang J M, et al. Anatomy of Ag/Hafnia-based selectors with 1010 nonlinearity. Adv Mater, 2017, 29: 1604457

  26. 26

    Hui F, Grustan-Gutierrez E, Long S B, et al. Graphene and related materials for resistive random access memories. Adv Electron Mater, 2017, 3: 1600195

  27. 27

    Zhao X L, Liu S, Niu J B, et al. Confining cation injection to enhance CBRAM performance by nanopore graphene layer. Small, 2017, 13: 1603948

  28. 28

    Cho D Y, Tappertzhofen S, Waser R, et al. Bond nature of active metal ions in SiO2-based electrochemical metallization memory cells. Nanoscale, 2013, 5: 1781–1784

  29. 29

    Volk A, Knez D, Thaler P, et al. Thermal instabilities and Rayleigh breakup of ultrathin silver nanowires grown in helium nanodroplets. Phys Chem Chem Phys, 2015, 17: 24570–24575

  30. 30

    Hsiung C P, Liao H W, Gan J Y, et al. Formation and instability of silver nanofilament in Ag-based programmable metallization cells. ACS Nano, 2010, 4: 5414–5420

  31. 31

    Tappertzhofen S, Linn E, Bottger U, et al. Nanobattery effect in RRAMs-implications on device stability and endurance. IEEE Electron Device Lett, 2014, 35: 208–210

  32. 32

    Song J, Woo J, Yoo J, et al. Effects of liner thickness on the reliability of AgTe/TiO2-based threshold switching devices. IEEE Trans Electron Device, 2017, 64: 4763–4767

  33. 33

    Tran X A, Zhu W, Liu W J, et al. A self-rectifying AlOy bipolar RRAM with Sub-50-µA set/reset current for cross-bar architecture. IEEE Electron Device Lett, 2012, 33: 1402–1404

  34. 34

    Wong H S P, Lee H Y, Yu S, et al. Metal-oxide RRAM. Proc IEEE, 2012, 100: 1951–1970

  35. 35

    Liu S, Lu N D, Zhao X L, et al. Eliminating negative-SET behavior by suppressing nanofilament overgrowth in cation-based memory. Adv Mater, 2016, 28: 10623–10629

  36. 36

    Yang Y C, Gao P, Li L Z, et al. Electrochemical dynamics of nanoscale metallic inclusions in dielectrics. Nat Commun, 2014, 5: 4232

  37. 37

    Song J, Prakash A, Lee D, et al. Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application. Appl Phys Lett, 2015, 107: 113504

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Acknowledgements

This work was supported by National Key R&D Program (Grant No. 2017YFB0405603), Beijing Training Project for the Leading Talents in S&T (Grant No. ljrc201508), Youth Innovation Promotion Association, Chinese Academy of Sciences (Grant No. 2015096), Opening Project of Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (Grant No. Y7YS033003).

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Correspondence to Xiangheng Xiao or Qi Liu.

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Cite this article

Zhao, X., Wang, R., Xiao, X. et al. Flexible cation-based threshold selector for resistive switching memory integration. Sci. China Inf. Sci. 61, 060413 (2018). https://doi.org/10.1007/s11432-017-9352-0

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Keywords

  • cation-based threshold switching
  • resistive switching
  • flexible selector
  • conductive filament (CF)
  • 1S1R