In the past few years, conventional digital IC technologies have developed rapidly and the device structures have shrunk down to the quasi-ballistic region which strongly affects the device characteristics. The usage of the steady-state transport model and the parameters of the drift-diffusion (DD) method may not correctly model the performance of these devices, including the velocity distributions of the carriers. Several previous studies have suggested modifying the transport parameters of the DD model to continue using it in the quasi-ballistic region. In this paper, a Monte Carlo (MC) simulator is used to calibrate the transport parameters of the DD model for silicon FinFETs. The device features obtained via the parameter-calibrated DD model fit well with the MC simulator. The trends of the calibration factors are also investigated for varying drain voltage, gate voltage, fin width and gate length.
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This work was supported in part by National Key Research and Development Plan (Grant No. 2016YFA0202101), National Natural Science Fund of China (Grant No. 61421005) and National High Technology Research and Development Program of China (863) (Grant No. 2015AA016501).
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Shen, L., Di, S., Yin, L. et al. Calibration of drift-diffusion model in quasi-ballistic transport region for FinFETs. Sci. China Inf. Sci. 61, 062406 (2018). https://doi.org/10.1007/s11432-017-9315-4
- technology computer aided design (TCAD)
- full-band Monte Carlo simulator
- quasi-ballistic transport