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Calibration of drift-diffusion model in quasi-ballistic transport region for FinFETs

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Abstract

In the past few years, conventional digital IC technologies have developed rapidly and the device structures have shrunk down to the quasi-ballistic region which strongly affects the device characteristics. The usage of the steady-state transport model and the parameters of the drift-diffusion (DD) method may not correctly model the performance of these devices, including the velocity distributions of the carriers. Several previous studies have suggested modifying the transport parameters of the DD model to continue using it in the quasi-ballistic region. In this paper, a Monte Carlo (MC) simulator is used to calibrate the transport parameters of the DD model for silicon FinFETs. The device features obtained via the parameter-calibrated DD model fit well with the MC simulator. The trends of the calibration factors are also investigated for varying drain voltage, gate voltage, fin width and gate length.

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References

  1. Lundstrom M, Ren Z B. Essential physics of carrier transport in nanoscale MOSFETs. IEEE Trans Electron Dev, 2002, 49: 133–141

    Article  Google Scholar 

  2. Rahman A, Guo J, Datta S, et al. Theory of ballistic nanotransistors. IEEE Trans Electron Dev, 2003, 50: 1853–1864

    Article  Google Scholar 

  3. Deleonibus S. Looking into the future of Nanoelectronics in the Diversification Efficient Era. Sci China Inf Sci, 2016, 59: 061401

    Article  Google Scholar 

  4. Cheng K G, Khakifirooz A. Fully depleted SOI (FDSOI) technology. Sci China Inf Sci, 2016, 59: 061402

    Article  Google Scholar 

  5. Natori K. Ballistic metal-oxide-semiconductor field effect transistor. J Appl Phys, 1994, 76: 4879–4890

    Article  Google Scholar 

  6. Natori K. Scaling limit of the MOS transistor: a ballistic MOSFET. IEICE Trans Electron, 2001, E84C: 1029–1036

    Google Scholar 

  7. Lundstrom M. Elementary scattering theory of the Si MOSFET. IEEE Electron Dev Lett, 1997, 18: 361–363

    Article  Google Scholar 

  8. Yang P Z, Lau W S, Ho V, et al. A comparison between the quasi-ballistic transport model and the conventional velocity saturation model for sub-0.1-μm mos transistors. In: Proceedings of Electron Devices and Solid-State Circuits, Taiwan, 2007. 99–102

    Google Scholar 

  9. Jin S, Fischetti M V, Tang T W. Theoretical study of carrier transport in silicon nanowire transistors based on the multisubband Boltzmann transport equation. IEEE Trans Electron Dev, 2008, 55: 2886–2897

    Article  Google Scholar 

  10. Jin S, Hong S M, Choi W, et al. Coupled drift-diffusion (DD) and multi-subband Boltzmann transport equation (MSBTE) solver for 3D multi-gate transistors. In: Proceedings of IEEE International Conference on Simulation of Semiconductor Processes and Devices, Glasgow, 2013. 348–351

    Google Scholar 

  11. Bhuwalka K K, Wu Z, Noh H K, et al. In0.53Ga0.47As-based nMOSFET design for low standby power applications. IEEE Trans Electron Dev, 2015, 62: 2816–2823

    Article  Google Scholar 

  12. Di S Y, Shen L, Chang P Y, et al. Performance comparison of Si, III-V double-gate n-type MOSFETs by deterministic Boltzmann transport equation solver. Jpn J Appl Phys, 2017, 56: 04CD08

    Article  Google Scholar 

  13. Chang P Y, Liu X Y, Di S Y, et al. Evaluation of ballistic transport in III-V-based p-Channel MOSFETs. IEEE Trans Electron Dev, 2017, 64: 1053–1059

    Article  Google Scholar 

  14. Yin L X, Shen L, Di S Y, et al. Investigation of thermal effects on FinFETs in the quasi-ballistic regime. In: Proceedings of International Conference on Solid State Devices and Materials, Sendai, 2017. 241–242

    Google Scholar 

  15. Roosbroeck W V. Theory of the flow of electrons and holes in germanium and other semiconductors. Bell Syst Tech J, 1950, 29: 560–607

    Article  MATH  Google Scholar 

  16. Du G, Liu X Y, Han R Q. Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor devices simulation. Chin Phys, 2006, 15: 177–181

    Article  Google Scholar 

  17. Lundstrom M. Drift-diffusion and computational electronics—still going strong after 40 years! In: Proceedings of International Conference on Simulation of Semiconductor Processes and Devices, Washington, 2015. 1–3

    Google Scholar 

  18. Jin S, Pham A-T, Choi W, et al. Performance evaluation of FinFETs: from multisubband BTE to DD calibration. In: Proceedings of International Conference on Simulation of Semiconductor Processes and Devices, Nuremberg, 2016. 109–115

    Google Scholar 

  19. Synopsys. Sentaurus TCAD User’s Manual, H-2013.03, 2013

    Google Scholar 

  20. Canali C, Majni G, Minder R, et al. Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature. IEEE Trans Electron Dev, 1975, 22: 1045–1047

    Article  Google Scholar 

  21. Klaassen D B M. A unified mobility model for device simulation-I. Model equations and concentration dependence. Solid-State Electron, 1992, 35: 953–959

    Article  Google Scholar 

  22. Du G, Liu X Y, Xia Z L, et al. Monte Carlo simulation of p- and n-channel GOI MOSFETs by solving the quantum Boltzmann equation. IEEE Trans Electron Dev, 2005, 52: 2258–2264

    Article  Google Scholar 

  23. Du G, Liu X Y, Xia Z L, et al. Simulation of Si and Ge UTB MOSFETs using Monte Carlo method based on the quantum Boltzmann equation. In: Proceedings of International Workshop on Computational Electronics, West Lafayette, 2004. 186–187

    Google Scholar 

  24. Du G, Zhang W, Wang J C, et al. Study of 20 nm bulk FINFET by using 3D full band Monte Carlo method with Effective Potential Quantum Correction. In: Proceedings of IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, 2010. 1952–1954

    Google Scholar 

Download references

Acknowledgements

This work was supported in part by National Key Research and Development Plan (Grant No. 2016YFA0202101), National Natural Science Fund of China (Grant No. 61421005) and National High Technology Research and Development Program of China (863) (Grant No. 2015AA016501).

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Authors and Affiliations

  1. Institute of Microelectronics, Peking University, Beijing, 100871, China

    Lei Shen, Shaoyan Di, Longxiang Yin, Xiaoyan Liu & Gang Du

Authors
  1. Lei Shen
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  2. Shaoyan Di
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  3. Longxiang Yin
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  4. Xiaoyan Liu
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  5. Gang Du
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Correspondence to Gang Du.

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Shen, L., Di, S., Yin, L. et al. Calibration of drift-diffusion model in quasi-ballistic transport region for FinFETs. Sci. China Inf. Sci. 61, 062406 (2018). https://doi.org/10.1007/s11432-017-9315-4

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  • DOI: https://doi.org/10.1007/s11432-017-9315-4

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