GeC film with high substitutional carbon concentration formed by ion implantation and solid phase epitaxy for strained Ge n-MOSFETs

This is a preview of subscription content, access via your institution.

References

  1. 1

    Yuan W, Xu J, Liu L, et al. A physical model of hole mobility for germanium-on-insulator pMOSFETs. J Semicond, 2016, 37: 044004

    Article  Google Scholar 

  2. 2

    Lin M, An X, Li M. Ge surface passivation by GeO2 fabricated by N2O plasma oxidation. Sci China Inf Sci, 2015, 58: 042403

    Article  Google Scholar 

  3. 3

    Deleonibus S. Looking into the future of Nanoelectronics in the Diversification Efficient Era. Sci China Inf Sci, 2016, 59: 061401

    Article  Google Scholar 

  4. 4

    Antoniadis D A, Khakifirooz A. MOSFET performance scaling: limitations and future options. In: Proceedings of IEEE International Electron Devices Meeting, San Francisco, 2008. 1–4

    Google Scholar 

  5. 5

    Okinaka M, Hamana Y, Tokuda T, et al. MBE growth mode and C incorporation of GeC epilayers on Si(0 0 1) substrates using an arc plasma gun as a novel C source. J Cryst Growth, 2003, 249: 78–86

    Article  Google Scholar 

  6. 6

    Hoffmann L, Bach J C, Bech Nielsen B, et al. Substitutional carbon in germanium. Phys Rev B, 1997, 55: 11167–11173

    Article  Google Scholar 

  7. 7

    Song L W, Zhan X D, Benson B W. Bistable interstitial-carbon−substitutional-carbon pair in silicon. Phys Rev B, 1990, 42: 5765–5783

    Article  Google Scholar 

  8. 8

    Tessema G, Bekele M, Vianden R. Growth of germanium-carbide thin film on crystal substrate. J Mater Sci-Mater Electron, 2010, 21: 1144–1148

    Article  Google Scholar 

  9. 9

    Itokawa H, Miyano K, Oshima Y. Carbon incorporation into substitutional silicon site by molecular carbon ion implantation and recrystallization annealing as stress technique in n-metal-oxide-semiconductor field-effect transistor. Jpn J Appl Phys, 2010, 49: 04DA05

    Google Scholar 

Download references

Acknowledgements

This work was supported in part by National Natural Science Foundation of China (Grant Nos. 61421005, 61534004, 60806033, 61474004), National High Technology Research and Development Program of China (Grant No. 2015AA016501), and National Key Research and Development Plan (Grant No. 2016YFA0200504).

Author information

Affiliations

Authors

Corresponding authors

Correspondence to Xia An or Ru Huang.

Additional information

Supporting information Appendix A. The supporting information is available online at info.scichina. com and link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.

Electronic supplementary material

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Zhang, B., An, X., Hu, X. et al. GeC film with high substitutional carbon concentration formed by ion implantation and solid phase epitaxy for strained Ge n-MOSFETs. Sci. China Inf. Sci. 61, 069405 (2018). https://doi.org/10.1007/s11432-017-9264-0

Download citation