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GeC film with high substitutional carbon concentration formed by ion implantation and solid phase epitaxy for strained Ge n-MOSFETs

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This work was supported in part by National Natural Science Foundation of China (Grant Nos. 61421005, 61534004, 60806033, 61474004), National High Technology Research and Development Program of China (Grant No. 2015AA016501), and National Key Research and Development Plan (Grant No. 2016YFA0200504).

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Correspondence to Xia An or Ru Huang.

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Supporting information Appendix A. The supporting information is available online at info.scichina. com and link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.

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Zhang, B., An, X., Hu, X. et al. GeC film with high substitutional carbon concentration formed by ion implantation and solid phase epitaxy for strained Ge n-MOSFETs. Sci. China Inf. Sci. 61, 069405 (2018). https://doi.org/10.1007/s11432-017-9264-0

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